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Phase Coexistence and Metal-Insulator Transition in Few-Layer Phosphorene: A Computational Study
Open accessAbstract
Based on ab initio density functional calculations, we propose $\ensuremath{\gamma}\text{\ensuremath{-}}\mathrm{P}$ and $\ensuremath{\delta}\text{\ensuremath{-}}\mathrm{P}$ as two additional stable structural phases of layered phosphorus besides the layered $\ensuremath{\alpha}\text{\ensuremath{-}}\mathrm{P}$ (black) and $\ensuremath{\beta}\text{\ensuremath{-}}\mathrm{P}$ (blue) phosphorus allotropes. Monolayers of some of these allotropes have a wide band gap, whereas others, including $\ensuremath{\gamma}\text{\ensuremath{-}}\mathrm{P}$, show a metal-insulator transition caused by in-layer strain or changing the number of layers. An unforeseen benefit is the possibility to connect different structural phases at no energy cost. This becomes particularly valuable in assembling heterostructures with well-defined metallic and semiconducting regions in one contiguous layer.
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Cited by
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Strain engineering in semiconducting two-dimensional crystals
Roldán, R., Castellanos-Gomez, A., Cappelluti, E., & Guinea, F. (2015) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/27/31/313201 · Cited by 527
Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices
Pang, J., Bachmatiuk, A., Yin, Y., Trzebicka, B., Zhao, L., Fu, L., Mendes, R. G., Gemming, T., Liu, Z., & Rummeli, M. H. (2018) · Advanced Energy Materials · doi:10.1002/aenm.201702093 · Cited by 518
Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst
Sa, B., Li, Y.-L., Qi, J., Ahuja, R., & Sun, Z. (2014) · The Journal of Physical Chemistry C · doi:10.1021/jp508618t · Cited by 422
2D V‐V Binary Materials: Status and Challenges
Guo, S., Zhang, Y., Ge, Y., Zhang, S., Zeng, H., & Zhang, H. (2019) · Advanced Materials · doi:10.1002/adma.201902352 · Cited by 363
Metadata
- Authors
- Guan, J., Zhu, Z., & Tománek, D.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2014-07-24
- Volume
- 113
- Issue
- 4
- Pages
- 046804-046804
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2070912340
- Cited by
- 671
- References
- 3
- FWCI
- 31.27
- Type
- journal article
- Language
- en
- Open access
- green
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