The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Drastic Pressure Effect on the Extremely Large Magnetoresistance inWTe2: Quantum Oscillation Study
Open accessAbstract
The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe2 single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas oscillations, four Fermi surfaces are identified, and two of them are found to persist to high pressure. The sizes of these two pockets are comparable, but show increasing difference with pressure. At 0.3 K and in 14.5 T, the magnetoresistance decreases drastically from 1.25×10(5)% under ambient pressure to 7.47×10(3)% under 23.6 kbar, which is likely caused by the relative change of Fermi surfaces. These results support the scenario that the perfect balance between the electron and hole populations is the origin of the extremely large magnetoresistance in WTe2.
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Citations
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Cited by
Edge conduction in monolayer WTe2
Fei, Z., Palomaki, T., Wu, S., Zhao, W., Cai, X., Sun, B., Nguyen, P., Finney, J., Xu, X., & Cobden, D. H. (2017) · Nature Physics · doi:10.1038/nphys4091 · Cited by 617
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Evidence for topological type-II Weyl semimetal WTe2
Li, P., Wen, Y., He, X., Zhang, Q., Xia, C., Yu, Z.-M., Yang, S. A., Zhu, Z., Alshareef, H. N., & Zhang, X.-X. (2017) · Nature Communications · doi:10.1038/s41467-017-02237-1 · Cited by 396
Transport of Topological Semimetals
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Metadata
- Authors
- Cai, P. L., Hu, J., He, L. P., Pan, J., Hong, X. C., Zhang, Z., Zhang, J., Wei, J., Mao, Z. Q., & Li, S. Y.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2015-07-28
- Volume
- 115
- Issue
- 5
- Pages
- 057202-057202
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1746560183
- Cited by
- 174
- References
- 4
- FWCI
- 11.59
- Type
- journal article
- Language
- en
- Open access
- green
- Licence
- Funders
- National Natural Science Foundation of China
- Science and Technology Commission of Shanghai Municipality (15XD1500200)
- National Science Foundation (DMR-1205469)
- Ministry of Science and Technology of China (2012CB821402, 2015CB921401)
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- Cai, P. L., Hu, J., He, L. P., Pan, J., Hong, X. C., Zhang, Z., Zhang, J., Wei, J., Mao, Z. Q., & Li, S. Y. (2015). Drastic Pressure Effect on the Extremely Large Magnetoresistance inWTe2: Quantum Oscillation Study. Physical Review Letters. https://doi.org/10.1103/physrevlett.115.057202
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