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Anisotropic giant magnetoresistance in NbSb2

Open access
Wang, Kefeng, Graf, D., Li, Lijun, Wang, Limin, Petrovic, C.·2014·Scientific Reports

Abstract

The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10(5)% in 2 K and 9 T field, and 4.3 × 10(6)% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals.

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Metadata

Authors
Wang, K., Graf, D., Li, L., Wang, L., & Petrovic, C.
Venue
Scientific Reports
Published
2014-12-05
Volume
4
Issue
1
Pages
7328-7328
ISSN
2045-2322 (ISSN-L)
OpenAlex
W1974104118
Cited by
181
References
9
FWCI
10.87
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: Anisotropic giant magnetoresistance in NbSb2. https://app.cochat.ai/papers/10.1038/srep07328
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Wang, K., Graf, D., Li, L., Wang, L., & Petrovic, C. (2014). Anisotropic giant magnetoresistance in NbSb2. Scientific Reports. https://doi.org/10.1038/srep07328

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