Cited by 199Terahertz technology and applicationsMagnetic properties of thin filmsTopological Materials and Phenomena

Broadband Terahertz Generation via the Interface Inverse Rashba-Edelstein Effect

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Zhou, C., Liu, Y. P., Wang, Z., Ma, S. J., Jia, M. W., Wu, R. Q., Zhou, L., Zhang, W. +3 more·2018·Physical Review Letters

Abstract

Novel mechanisms for electromagnetic wave emission in the terahertz frequency regime emerging at the nanometer scale have recently attracted intense attention for the purpose of searching next-generation broadband THz emitters. Here, we report broadband THz emission, utilizing the interface inverse Rashba-Edelstein effect. By engineering the symmetry of the Ag/Bi Rashba interface, we demonstrate a controllable THz radiation (∼0.1-5 THz) waveform emitted from metallic Fe/Ag/Bi heterostructures following photoexcitation. We further reveal that this type of THz radiation can be selectively superimposed on the emission discovered recently due to the inverse spin Hall effect, yielding a unique film thickness dependent emission pattern. Our results thus offer new opportunities for versatile broadband THz radiation using the interface quantum effects.

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  • Free charge currents are generated when pure spin currents are converted to charge currents, occurring in inverse effects at interfaces between magnetic and non-magnetic materials such as the inverse spin Hall and inverse Rashba-Edelstein effects.

    “This can occur in a variety of inverse effects at interfaces between magnetic and non-magnetic materials, as with the inverse spin Hall53 and inverse Rashba-Edelstein54,55 effects.”

    From Ultrafast terahertz emission from emerging symmetry-broken materials (2023) · cites this paper as [55]

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  • The inverse spin-orbit torque effect occurs directly at interfaces of magnetic heterostructures.

    “One instance of this is the inverse spin-orbit torque effect, which occurs directly at interfaces of magnetic heterostructures54,55.”
  • Femtosecond optical pumping has yielded charge currents capable of driving THz emission in FM/Bi/Ag heterostructures due to intrinsically large spin splitting in Ag/Bi interfaces.

    “femtosecond optical pumping has recently yielded charge currents capable of driving THz emission in FM/Bi/Ag heterostructures54,55, schematically represented in Fig. 5c. This is due to the intrinsically large spin splitting in Ag/Bi interfaces133.”
  • The emitted THz amplitude is highly sensitive to the thickness of the Bi layer, likely due to decay of the injected spin current and multiple reflection effects.

    “the emitted THz amplitude was found to be highly sensitive to the thickness of the Bi layer55. This is likely due to effects such as the decay of the injected spin current and multiple reflection effects when it makes up the second and third layers, respectively.”

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  1. [15]15. A. Hoffmann, IEEE Trans. Magn. 49 , 5712-5793 (2013).

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Authors
Zhou, C., Liu, Y. P., Wang, Z., Ma, S. J., Jia, M. W., Wu, R. Q., Zhou, L., Zhang, W., Liu, M. K., Wu, Y. Z., & Qi, J.
Affiliations
  • Fudan University (CN)
  • University of Electronic Science and Technology of China (CN)
  • University of California, Irvine (US)
  • Oakland University (US)
  • Stony Brook University (US)
Venue
Physical Review Letters
Published
2018-08-20
Volume
121
Issue
8
Pages
086801-086801
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2796822350
Cited by
199
References
51
Citations by year
2026: 22 · 2025: 28 · 2024: 28 · 2023: 20 · 2022: 33 · 2021: 31 · 2020: 20 · 2019: 14 · 2018: 3
FWCI
6.51
Type
journal article
Language
en
Open access
Locations
  • Physical Review Letters (publishedVersion)
  • PubMed (publishedVersion)
  • arXiv (Cornell University) (submittedVersion)
  • OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
  • arXiv (Cornell University)
Funders
  • National Natural Science Foundation of China (11734006, 11474066, 11434003, 11674068, 11734007, 11474056)
  • Fudan University
  • U.S. Department of Energy (DE-FG02-05ER46237)
  • National Key Basic Research Program of China (2015CB921401)
  • National Key Research and Development Program of China (2016YFA030070, 2017YFA0303504)
  • Science Challenge Program of China (TZ2016004)
  • Program of Shanghai Academic Research Leader (17XD1400400)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Magnetic properties of thin films
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Topological Materials and Phenomena
Keywords
terahertz emission, inverse Rashba-Edelstein effect, inverse spin Hall effect, photoexcitation, film thickness dependence, spintronics

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