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Cited by 715

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

New Transport Phenomenon in a Semiconductor "Superlattice"

Esaki, L., Chang, L. L.·1974·Physical Review Letters

Abstract

We report electronic transport properties in a GaAs-AlAs periodic structure known as a "superlattice" prepared by a molecular-beam epitaxy. Its differential conductance in the superlattice direction first gradually decreases, followed by a rapid drop to negative values, then, at high fields, exhibits an oscillatory behavior with respect to applied voltages. This observation is interpreted in terms of the formation and expansion of a high-field domain. The voltage period of the oscillation provides the energy of the first-excited band which is in good agreement with that predicted by the theory.

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Metadata

Authors
Esaki, L., & Chang, L. L.
Venue
Physical Review Letters
Published
1974-08-19
Volume
33
Issue
8
Pages
495-498
ISSN
0031-9007 (ISSN-L)
OpenAlex
W2329509629
Cited by
715
References
1
FWCI
8.61
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: New Transport Phenomenon in a Semiconductor "Superlattice". https://app.cochat.ai/papers/10.1103/physrevlett.33.495
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Esaki, L., & Chang, L. L. (1974). New Transport Phenomenon in a Semiconductor "Superlattice". Physical Review Letters. https://doi.org/10.1103/physrevlett.33.495

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.