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Cited by 1,530

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Model for the Electronic Structure of Amorphous Semiconductors

Anderson, P. W.·1975·Physical Review Letters

Abstract

It is pointed out that a model which agrees well with the observed properties of semiconducting glasses is an attractive Hubbard model of localized states. Such a model has no gap for two-electron excitations but an energy gap for one-electron ones. The suggested physical model for a two-electron excitation is a new covalent bond in the structure, which is severely localized. It is also proposed that the one-electron excitation spectrum is wholly, or almost wholly, extended, and all observed gaps are identical with the mobility gap.

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Metadata

Authors
Anderson, P. W.
Venue
Physical Review Letters
Published
1975-04-14
Volume
34
Issue
15
Pages
953-955
ISSN
0031-9007 (ISSN-L)
OpenAlex
W2072859362
Cited by
1,530
References
1
FWCI
48.07
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Model for the Electronic Structure of Amorphous Semiconductors. https://app.cochat.ai/papers/10.1103/physrevlett.34.953
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Anderson, P. W. (1975). Model for the Electronic Structure of Amorphous Semiconductors. Physical Review Letters. https://doi.org/10.1103/physrevlett.34.953

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.