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Electron Tunneling Experiments on AmorphousGe1−xAux
Abstract
Tunneling measurements of the electronic density of states of amorphous ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Au}}_{x}$ near the metal-insulator transition at $x=0.12$ are reported. In the metallic phase there is a giant zero-bias anomaly with a minimum in the density of states at the Fermi energy. In the insulating phase a pseudogap opens, centered about the Fermi energy, with zero density of states at the Fermi energy.
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Citations
Cited by
Belitz, D., & Kirkpatrick, T. R. (1994) · Reviews of Modern Physics · doi:10.1103/revmodphys.66.261 · Cited by 991
Scaling theory of the metal-insulator transition in amorphous materials
McMillan, W. L. (1981) · Physical Review B · doi:10.1103/physrevb.24.2739 · Cited by 358
Self-citationTunneling and Transport Measurements at the Metal-Insulator Transition of Amorphous Nb: Si
Hertel, G., Bishop, D. J., Spencer, E. G., Rowell, J. M., & Dynes, R. C. (1983) · Physical Review Letters · doi:10.1103/physrevlett.50.743 · Cited by 314
Low-Temperature Electronic Properties of a Normal Conducting Perovskite Oxide (LaNiO3)
Rajeev, K. P., Shivashankar, G. V., & Raychaudhuri, A. K. (1991) · Solid State Communications · doi:10.1016/0038-1098(91)90915-i · Cited by 245
Critical Conductivity Exponent for Si:B
Dai, P., Zhang, Y., & Sarachik, M. P. (1991) · Physical Review Letters · doi:10.1103/physrevlett.66.1914 · Cited by 100
Metadata
- Authors
- McMillan, W. L., & Mochel, J.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1981-02-23
- Volume
- 46
- Issue
- 8
- Pages
- 556-557
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W39199660
- Cited by
- 202
- References
- 0
- FWCI
- 18.99
- Type
- journal article
- Language
- en
- Open access
- closed
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- McMillan, W. L., & Mochel, J. (1981). Electron Tunneling Experiments on AmorphousGe1−xAux. Physical Review Letters. https://doi.org/10.1103/physrevlett.46.556
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