Critical Conductivity Exponent for Si:B

Disordered electronic systems

Lee, P. A., & Ramakrishnan, T. V. (1985) · Reviews of Modern Physics · doi:10.1103/revmodphys.57.287 · Cited by 6,123 · see citing works

Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System

Hikami, S., Larkin, A. I., & Nagaoka, Y. (1980) · Progress of Theoretical Physics · doi:10.1143/ptp.63.707 · Cited by 2,774 · see citing works

Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors

Elliott, R. J. (1954) · Physical Review · doi:10.1103/physrev.96.266 · Cited by 1,989 · see citing works

Theory of negative magnetoresistance in three-dimensional systems

Kawabata, A. (1980) · Solid State Communications · doi:10.1016/0038-1098(80)90644-4 · Cited by 365 · see citing works

Theory of Negative Magnetoresistance I. Application to Heavily Doped Semiconductors

Kawabata, A. (1980) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.49.628 · Cited by 329 · see citing works

Metal-insulator transition in a doped semiconductor

Rosenbaum, T. F., Milligan, R. F., Paalanen, M. A., Thomas, G. A., Bhatt, R. N., & Lin, W. (1983) · Physical review. B, Condensed matter · doi:10.1103/physrevb.27.7509 · Cited by 320 · see citing works

Tunneling and Transport Measurements at the Metal-Insulator Transition of Amorphous Nb: Si

Hertel, G. B., Bishop, D. J., Spencer, E. G., Rowell, J. M., & Dynes, R. C. (1983) · Physical Review Letters · doi:10.1103/physrevlett.50.743 · Cited by 314 · see citing works

Resistivity‐Dopant Density Relationship for Boron‐Doped Silicon

Thurber, W. R., Mattis, R. L., Liu, Y. M., & Filliben, J. J. (1980) · Journal of The Electrochemical Society · doi:10.1149/1.2129394 · Cited by 213 · see citing works

Electron Tunneling Experiments on Amorphous Ge1−xAux

McMillan, W. L., & Mochel, J. M. (1981) · Physical Review Letters · doi:10.1103/physrevlett.46.556 · Cited by 201 · see citing works

dc conductivity of arsenic-doped silicon near the metal-insulator transition

Shafarman, W. N., Koon, D. W., & Castner, T. G. (1989) · Physical review. B, Condensed matter · doi:10.1103/physrevb.40.1216 · Cited by 161 · see citing works

Paramagnetic Resonance Absorption from Acceptors in Silicon

Fehér, G., Hensel, J. C., & Gere, E. A. (1960) · Physical Review Letters · doi:10.1103/physrevlett.5.309 · Cited by 144 · see citing works

Fermi-liquid theory of interacting disordered systems and the scaling theory of the metal-insulator transition

Castellani, C., Kotliar, G., & Lee, P. A. (1987) · Physical Review Letters · doi:10.1103/physrevlett.59.323 · Cited by 138 · see citing works

Anderson Localization

Skipetrov, S. E., & Page, J. H. (1988) · Springer proceedings in physics · doi:10.1007/978-3-642-73554-7 · Cited by 132 · see citing works

Temperature-dependent conductivity of metallic doped semiconductors

Thomas, G. A., Kawabata, A., Ootuka, Y., Katsumoto, S., Kobayashi, S., & Sasaki, W. (1982) · Physical review. B, Condensed matter · doi:10.1103/physrevb.26.2113 · Cited by 113 · see citing works

Evidence for localization effects in compensated semiconductors

Thomas, G. A., Ootuka, Y., Katsumoto, S., Kobayashi, S., & Sasaki, W. (1982) · Physical review. B, Condensed matter · doi:10.1103/physrevb.25.4288 · Cited by 108 · see citing works

Metal-insulator transition in Si: As

Newman, P. F., & Holcomb, D. F. (1983) · Physical review. B, Condensed matter · doi:10.1103/physrevb.28.638 · Cited by 87 · see citing works

Empirical Characterization of Low-Temperature Magnetoresistance Effects in Heavily Doped Ge and Si

Roth, H., Straub, W. D., BERNARD, W., & Mulhern, J. E. (1963) · Physical Review Letters · doi:10.1103/physrevlett.11.328 · Cited by 67 · see citing works

Critical exponent of the metal-insulator transition

Thomas, G. A. (1985) · Philosophical Magazine B · doi:10.1080/13642818508240617 · Cited by 58 · see citing works

Renormalization Group Functions of Orthogonal and Symplectic Non-Linear Models

Hikami, S. (1980) · Progress of Theoretical Physics · doi:10.1143/ptp.64.1466 · Cited by 58 · see citing works

Raman Scattering and Photoluminescence in Boron-Doped and Arsenic-Doped Silicon

Cherlow, J. M., Aggarwal, R. L., & Lax, B. (1973) · Physical review. B, Solid state · doi:10.1103/physrevb.7.4547 · Cited by 56 · see citing works

Length Scales at the Metal-Insulator Transition in Compensated GaAs

Maliepaard, M. C., Pepper, M., Newbury, R., & Hill, G. (1988) · Physical Review Letters · doi:10.1103/physrevlett.61.369 · Cited by 56 · see citing works

Possible observation of an electronic phase transition in Sb doped Si

Long, A. P., & Pepper, M. (1984) · Journal of Physics C Solid State Physics · doi:10.1088/0022-3719/17/17/003 · Cited by 45 · see citing works

Critical behavior of the zero-temperature conductivity in compensated silicon, Si:(P,B)

Hirsch, M. J., Thomanschefsky, U., & Holcomb, D. F. (1988) · Physical review. B, Condensed matter · doi:10.1103/physrevb.37.8257 · Cited by 43 · see citing works

Metal-Insulator Transition in a Double-Donor System, Si: P, As

Newman, P. F., & Holcomb, D. F. (1983) · Physical Review Letters · doi:10.1103/physrevlett.51.2144 · Cited by 36 · see citing works

Indication of universal behavior of Hall conductivity near the metal-insulator transition in disordered systems

Rohde, M., & Micklitz, H. (1987) · Physical review. B, Condensed matter · doi:10.1103/physrevb.36.7572 · Cited by 34 · see citing works

The magnetic field induced metal-insulator transition in indium phosphide and silicon

Long, A. P., & Pepper, M. (1985) · Solid-State Electronics · doi:10.1016/0038-1101(85)90211-4 · Cited by 24 · see citing works

Metal-insulator transition in amorphous Ga-Ar mixtures: Critical exponents of electrical transport parameters and behavior of superconductivity

Zint, T., Rohde, M., & Micklitz, H. (1990) · Physical review. B, Condensed matter · doi:10.1103/physrevb.41.4831 · Cited by 21 · see citing works

Metal-nonmetal transition and superconductivity in amorphous Si1−xAuxSystem

Yamaguchi, M., Nishida, N., Furubayashi, T., Morigaki, K., Ishimoto, H., & Ono, K. (1983) · Physica B+C · doi:10.1016/0378-4363(83)90626-5 · Cited by 11 · see citing works

On the Magnetoresistance of p-Type Semiconductors

Kawabata, A. (1986) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.55.3299 · Cited by 4 · see citing works

The Anderson-Mott transition

Belitz, D., & Kirkpatrick, T. R. (1994) · Reviews of Modern Physics · doi:10.1103/revmodphys.66.261 · Cited by 983 · see citing works

Superconductivity in doped cubic silicon

Bustarret, E., Marcenat, C., Achatz, P., Kačmarčík, J., Lévy-Bertrand, F., Huxley, A., Ortéga, L., Bourgeois, E., Blase, X., Débarre, D., et al. (2006) · Nature · doi:10.1038/nature05340 · Cited by 266 · see citing works

Metal-Insulator Transition in Two Dimensions: Effects of Disorder and Magnetic Field

Popović, D., Fowler, A. B., & Washburn, S. (1997) · Physical Review Letters · doi:10.1103/physrevlett.79.1543 · Cited by 243 · see citing works

Metal-insulator transition and superconductivity in boron-doped diamond

Klein, T., Achatz, P., Kačmarčík, J., Marcenat, C., Gustafsson, F., Marcus, J., Bustarret, E., Pernot, J., Omnès, F., Sernelius, B. E., et al. (2007) · Physical Review B · doi:10.1103/physrevb.75.165313 · Cited by 201 · see citing works

A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation

Altermatt, P. P., Schenk, A., Schmithüsen, B., & Heiser, G. A. (2006) · Journal of Applied Physics · doi:10.1063/1.2386935 · Cited by 141 · see citing works

Electrical conductivity of metallic Si:B near the metal-insulator transition

Dai, P., Zhang, Y., & Sarachik, M. P. (1992) · Physical review. B, Condensed matter · doi:10.1103/physrevb.45.3984 · Cited by 140 · see citing works

Possible solution of the conductivity exponent puzzle for the metal-insulator transition in heavily doped uncompensated semiconductors

Stupp, H., Hornung, M., Lakner, M., Madel, O., & Löhneysen, H. V. (1993) · Physical Review Letters · doi:10.1103/physrevlett.71.2634 · Cited by 138 · see citing works

Direct Observation of the Coulomb Correlation Gap in a Nonmetallic Semiconductor, Si: B

Massey, J. G., & Lee, M. (1995) · Physical Review Letters · doi:10.1103/physrevlett.75.4266 · Cited by 129 · see citing works

Hopping Conduction and Metal-Insulator Transition in Isotopically Enriched Neutron-Transmutation-Doped 70 Ge:Ga

Itoh, K. M., Häller, E. E., Beeman, J. W., Hansen, W. L., Emes, J., Reichertz, L. A., Kreysa, E., Shutt, T., Cummings, A., Stockwell, W., et al. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.4058 · Cited by 105 · see citing works

Theory of the Casimir interaction from graphene-coated substrates using the polarization tensor and comparison with experiment

Klimchitskaya, G. L., Mohideen, U., & Mostepanenko, V. M. (2014) · Physical Review B · doi:10.1103/physrevb.89.115419 · Cited by 83 · see citing works

Critical Behavior of the Conductivity of Si:P at the Metal-Insulator Transition under Uniaxial Stress

Waffenschmidt, S., Pfleiderer, C., & Löhneysen, H. V. (1999) · Physical Review Letters · doi:10.1103/physrevlett.83.3005 · Cited by 73 · see citing works

Coulomb gap in a doped semiconductor near the metal-insulator transition: Tunneling experiment and scaling ansatz

Lee, M., Massey, J. G., Nguyen, V. L., & Shklovskii, B. I. (1999) · Physical review. B, Condensed matter · doi:10.1103/physrevb.60.1582 · Cited by 71 · see citing works

Hyperdoped silicon: Processing, properties, and devices

Tong, Z., Bu, M., Zhang, Y., Yang, D., & Pi, X. (2022) · Journal of Semiconductors · doi:10.1088/1674-4926/43/9/093101 · Cited by 48 · see citing works

Anderson Transition in a Strong Magnetic Field

Henneke, M., Krämer, B., & Ohtsuki, T. (1994) · Europhysics Letters (EPL) · doi:10.1209/0295-5075/27/5/010 · Cited by 48 · see citing works

Electron Tunneling Study of Coulomb Correlations across the Metal-Isulator Transition in Si:B

Massey, J. G., & Lee, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3399 · Cited by 47 · see citing works

Specific heat and electronic states of superconducting boron-doped silicon carbide

Kriener, M., Maeno, Y., Oguchi, T., Ren, Z., Kato, J., Muranaka, T., & Akimitsu, J. (2008) · Physical Review B · doi:10.1103/physrevb.78.024517 · Cited by 47 · see citing works

Low‐Temperature Transport in Crystalline Ge1Sb2Te4

Volker, H., Jost, P., & Wuttig, M. (2015) · Advanced Functional Materials · doi:10.1002/adfm.201500830 · Cited by 46 · see citing works

Superconductivity in doped semiconductors

Bustarret, E. (2015) · Physica C Superconductivity · doi:10.1016/j.physc.2015.02.021 · Cited by 46 · see citing works

Metal-insulator transition in amorphous Si1−xNix: Evidence for Mott’s minimum metallic conductivity

Möbius, A., Frenzel, C., Thielsch, R., Rosenbaum, R. L., Adkins, C. J., Schreiber, M., Bauer, H. D., Grötzschel, R., Hoffmann, V., Krieg, T., et al. (1999) · Physical review. B, Condensed matter · doi:10.1103/physrevb.60.14209 · Cited by 44 · see citing works

Electrical properties of isotopically enriched neutron-transmutation-doped 70Ge:Ga near the metal-insulator transition

渡部, 道., Ootuka, Y., Itoh, K. M., & Haller, E. E. (1998) · Physical review. B, Condensed matter · doi:10.1103/physrevb.58.9851 · Cited by 43 · see citing works

Determination of the Critical Conductivity Exponent for the Metal-Insulator Transition at Nonzero Temperatures: Universality of the Transition

Shlimak, I., Kaveh, M., Ussyshkin, R., Ginodman, V., & Resnick, L. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.1103 · Cited by 43 · see citing works

Microwave ac Conductivity Spectrum of a Coulomb Glass

Lee, M., & Stutzmann, M. L. (2001) · Physical Review Letters · doi:10.1103/physrevlett.87.056402 · Cited by 42 · see citing works

Universal Scaling of the Magnetoconductance of Metallic Si:B

Bogdanovich, S., Dai, P., Sarachik, M. P., & Dobrosavljević, V. (1995) · Physical Review Letters · doi:10.1103/physrevlett.74.2543 · Cited by 39 · see citing works

Frequency-dependent conductivity of electron glasses

Helgren, E., Armitage, N. P., & Gruner, G. (2004) · Physical Review B · doi:10.1103/physrevb.69.014201 · Cited by 38 · see citing works

Magnetoconductance of metallic Si:B near the metal-insulator transition

Dai, P., Zhang, Y., & Sarachik, M. P. (1992) · Physical review. B, Condensed matter · doi:10.1103/physrevb.46.6724 · Cited by 38 · see citing works

Metal-insulator transition in boron-ion-implanted diamond

Tshepe, T., Kasl, C., Prins, J. F., & Hoch, M. J. R. (2004) · Physical Review B · doi:10.1103/physrevb.70.245107 · Cited by 36 · see citing works

Fundamentals and applications of isotope effect in solids

Plekhanov, V. G. (2005) · Progress in Materials Science · doi:10.1016/j.pmatsci.2005.08.002 · Cited by 34 · see citing works

Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B

Trường, N. X., Haertelt, M., Jaeger, B. K. A., Gewinner, S., Schöllkopf, W., Fielicke, A., & Dopfer, O. (2015) · International Journal of Mass Spectrometry · doi:10.1016/j.ijms.2015.11.006 · Cited by 34 · see citing works

Electron‐electron interactions and the metal‐insulator transition in heavily doped silicon

Löhneysen, H. V. (2011) · Annalen der Physik · doi:10.1002/andp.201100034 · Cited by 34 · see citing works

Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy

Heslinga, D. R., Shafranjuk, S. E., van Kempen, H., & Klapwijk, T. M. (1994) · Physical review. B, Condensed matter · doi:10.1103/physrevb.49.10484 · Cited by 33 · see citing works

Chapter 6 Electron Transport

Allen, P. B. (2006) · Contemporary concepts of condensed matter science · doi:10.1016/s1572-0934(06)02006-3 · Cited by 32 · see citing works

Complete Scaling Analysis of the Metal–Insulator Transition in Ge:Ga: Effects of Doping-Compensation and Magnetic Field

Itoh, K. M., 渡部, 道., Ootuka, Y., Haller, E. E., & Ohtsuki, T. (2004) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.73.173 · Cited by 32 · see citing works

Low-Frequency Noise Probe of Interacting Charge Dynamics in Variable-Range Hopping Boron-Doped Silicon

Massey, J. G., & Lee, M. (1997) · Physical Review Letters · doi:10.1103/physrevlett.79.3986 · Cited by 30 · see citing works

The metal-insulator transition in disordered solids: How theoretical prejudices influence its characterization A critical review of analyses of experimental data

Möbius, A. (2018) · Critical reviews in solid state and materials sciences/CRC critical reviews in solid state and materials sciences · doi:10.1080/10408436.2017.1370575 · Cited by 27 · see citing works

Critical conductivity exponent of Si:P in a magnetic field

Dai, P., Zhang, Y., Bogdanovich, S., & Sarachik, M. P. (1993) · Physical review. B, Condensed matter · doi:10.1103/physrevb.48.4941 · Cited by 27 · see citing works

Comparison of hydrodynamic model of graphene with recent experiment on measuring the Casimir interaction

Klimchitskaya, G. L., & Mostepanenko, V. M. (2015) · Physical Review B · doi:10.1103/physrevb.91.045412 · Cited by 26 · see citing works

Pressure-induced insulator-metal transition of localized states in FeSi1−xGex

Mani, A., Bharathi, A., & Hariharan, Y. (2001) · Physical review. B, Condensed matter · doi:10.1103/physrevb.63.115103 · Cited by 26 · see citing works

Electronic Transport Processes in Heavily Doped Uncompensated and Compensated Silicon as Probed by the Thermoelectric Power

Liu, X., Sidorenko, A., Wagner, S., Ziegler, P., & Löhneysen, H. V. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3395 · Cited by 24 · see citing works

Effect of a magnetic field on the critical conductivity exponent at the metal-insulator transition

Dai, P., Zhang, Y., & Sarachik, M. P. (1991) · Physical Review Letters · doi:10.1103/physrevlett.67.136 · Cited by 24 · see citing works

Critical behavior of the Hall coefficient of Si:B

Dai, P., Zhang, Y., & Sarachik, M. P. (1993) · Physical Review Letters · doi:10.1103/physrevlett.70.1968 · Cited by 23 · see citing works

Metal-nonmetal transition inp-type SiC polytypes

Persson, C., da Silva, A. F., & Johansson, B. (2001) · Physical review. B, Condensed matter · doi:10.1103/physrevb.63.205119 · Cited by 23 · see citing works

Transport properties of silicon implanted with bismuth

Abramof, E., da Silva, A. F., Sernelius, B. E., de Souza, J. P., & Boudinov, H. I. (1997) · Physical review. B, Condensed matter · doi:10.1103/physrevb.55.9584 · Cited by 20 · see citing works

Anderson-Mott transition as a quantum-glass problem

Belitz, D., & Kirkpatrick, T. R. (1995) · Physical review. B, Condensed matter · doi:10.1103/physrevb.52.13922 · Cited by 18 · see citing works

Ultrafast (but Many-Body) Relaxation in a Low-Density Electron Glass

Thorsmølle, V. K., & Armitage, N. P. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.086601 · Cited by 16 · see citing works

Metal-insulator transition near a superconducting state

Kaveh, M., & Mott, N. F. (1992) · Physical Review Letters · doi:10.1103/physrevlett.68.1904 · Cited by 16 · see citing works

Bandgap narrowing in silicon solar cells considering the p-type doping material

Nubile, P., & da Silva, A. F. (1997) · Solid-State Electronics · doi:10.1016/s0038-1101(96)00127-x · Cited by 15 · see citing works

Disorder, electron-electron interactions and the metal-insulator transition in heavily doped Si:P

Löhneysen, H. V. (2000) · Advances in solid state physics · doi:10.1007/bfb0108351 · Cited by 15 · see citing works

Mean Free Path Effects on the Experimentally Measured Thermal Conductivity of Single-Crystal Silicon Microbridges

English, T. S., Phinney, L. M., Hopkins, P. E., & Serrano, J. R. (2013) · Journal of Heat Transfer · doi:10.1115/1.4024357 · Cited by 14 · see citing works

Applications of isotope effects in solids

Plekhanov, V. G. (2003) · Journal of Materials Science · doi:10.1023/a:1025192632644 · Cited by 14 · see citing works

Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers

Dahlem, F., Kociniewski, T., Marcenat, C., Grockowiak, A. D., Pascal, L., Achatz, P., Boulmer, J., Débarre, D., Klein, T., Bustarret, E., et al. (2010) · Physical Review B · doi:10.1103/physrevb.82.140505 · Cited by 14 · see citing works

Conductivity maximum at low temperatures in metallic Si:P near the metal-insulator transition

Blaschette, A., Ruzzu, A., Wagner, S., & Löhneysen, H. V. (1996) · Europhysics Letters (EPL) · doi:10.1209/epl/i1996-00264-2 · Cited by 13 · see citing works

Quantum percolation of high Tc materials: Tc dependence on carrier density

Dallacasa, V., & Feduzi, R. (1992) · Physics Letters A · doi:10.1016/0375-9601(92)90790-s · Cited by 13 · see citing works

Super silicon

Cava, R. J. (2006) · Nature · doi:10.1038/444427a · Cited by 12 · see citing works

Scaling of the conductivity of insulating Si:B: A temperature-independent hopping prefactor

Sarachik, M. P., & Dai, P. (2002) · Europhysics Letters (EPL) · doi:10.1209/epl/i2002-00164-y · Cited by 11 · see citing works

Metal-Insulator Transition in Uncompensated Si:P in the Presence of a Magnetic Field

Hornung, M., Ruzzu, A., Schlager, H. G., Stupp, H., & Löhneysen, H. V. (1994) · Europhysics Letters (EPL) · doi:10.1209/0295-5075/28/1/008 · Cited by 11 · see citing works

Universality of the scaling exponents for theT=0 conductivity and Hall coefficient for very weakly compensated barely metallic silicon

Castner, T. G. (1995) · Physical review. B, Condensed matter · doi:10.1103/physrevb.52.12434 · Cited by 11 · see citing works

Bipolaronic insulator on alkali/Si(111):B-23×23R30° interfaces

Tournier-Colletta, C., Cardenas, L., Fagot‐Révurat, Y., Kierren, B., Tejeda, A., Malterre, D., Fèvre, P. L., Bertran, F., & Taleb-Ibrahimi, A. (2010) · Physical Review B · doi:10.1103/physrevb.82.165429 · Cited by 10 · see citing works

The Casimir effect in graphene systems: Experiment and theory

Klimchitskaya, G. L., Mohideen, U., & Mostepanenko, V. M. (2022) · International Journal of Modern Physics A · doi:10.1142/s0217751x22410032 · Cited by 9 · see citing works

How to modify the van der Waals and Casimir forces without change of the dielectric permittivity

Klimchitskaya, G. L., Mohideen, U., & Mostepanenko, V. M. (2012) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/24/42/424202 · Cited by 9 · see citing works

Electronic properties of silicon nanotubes with distinct bond lengths

Bunder, J. E., & Hill, J. M. (2009) · Physical Review B · doi:10.1103/physrevb.79.233401 · Cited by 9 · see citing works

Gate-induced crossover from unconventional metals to Fermi liquids in multiwalled carbon nanotubes

Kanbara, T., Iwasa, T., Tsukagoshi, K., Aoyagi, Y., & Iwasa, Y. (2004) · Applied Physics Letters · doi:10.1063/1.1842373 · Cited by 9 · see citing works

Phase Diagram of Coulomb Interactions across the Metal-Insulator Transition in Si:B

Lee, M. (2004) · Physical Review Letters · doi:10.1103/physrevlett.93.256401 · Cited by 8 · see citing works

Resolution of the Scaling Exponent Puzzle for Weakly Compensated Crystalline Silicon and Germanium Metal-Insulator Systems

Castner, T. G. (2000) · Physical Review Letters · doi:10.1103/physrevlett.84.1539 · Cited by 8 · see citing works

Scaling of the conductivity of Si:B: Anomalous crossover in a magnetic field

Bogdanovich, S., Dai, P., Sarachik, M. P., Dobrosavljević, V., & Kotliar, G. (1997) · Physical review. B, Condensed matter · doi:10.1103/physrevb.55.4215 · Cited by 8 · see citing works

Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/ Alx Ga1−x As superlattice

Hilber, W., Helm, M., Peeters, F. M., Alavi, K., & Pathak, R. (1996) · Physical review. B, Condensed matter · doi:10.1103/physrevb.53.6919 · Cited by 8 · see citing works

Electrical resistivity of bismuth implanted into silicon

da Silva, A. F., Sernelius, B. E., de Souza, J. P., & Boudinov, H. I. (1996) · Journal of Applied Physics · doi:10.1063/1.361393 · Cited by 7 · see citing works

Mesoscopic superconductivity above 10 K in silicon point contacts

Sirohi, A., Gayen, S., Aslam, M., & Sheet, G. (2018) · Applied Physics Letters · doi:10.1063/1.5064703 · Cited by 7 · see citing works

Superconductivity in silicon

Moun, M., & Sheet, G. (2022) · Superconductor Science and Technology · doi:10.1088/1361-6668/ac7520 · Cited by 7 · see citing works

Contamination of silicon during ion-implantation and annealing

Liu, X., Pohl, R. O., Asher, S. E., & Crandall, R. S. (1998) · Journal of Non-Crystalline Solids · doi:10.1016/s0022-3093(98)00175-6 · Cited by 6 · see citing works

Hindered electronic transport in two-dimensional metallic ErSi2 nanoscale islands on Si(111): An STM study

Brihuega, I., Dupont-Ferrier, E., Mallet, P., Magaud, L., Pons, S., Gómez‐Rodríguez, J. M., & Veuillen, J. ‐. (2005) · Physical Review B · doi:10.1103/physrevb.72.205309 · Cited by 6 · see citing works

A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

Borblik, V. L. (2009) · Semiconductor Physics Quantum Electronics & Optoelectronics · doi:10.15407/spqeo12.04.339 · Cited by 6 · see citing works

Response to ‘‘Universality of the scaling exponents for theT=0 conductivity and Hall coefficient for very weakly compensated barely metallic silicon’’

Dai, P., Bogdanovich, S., Zhang, Y., & Sarachik, M. P. (1995) · Physical review. B, Condensed matter · doi:10.1103/physrevb.52.12439 · Cited by 6 · see citing works

Low-Temperature Magnetization Studies of Nb x Si 1− x Films

Allen, L. C., Paalanen, M. A., & Bhatt, R. N. (1993) · Europhysics Letters (EPL) · doi:10.1209/0295-5075/21/9/009 · Cited by 6 · see citing works

Conductivity of metallic Si:B near the metal-insulator transition: Comparison between unstressed and uniaxially stressed samples

Bogdanovich, S., Sarachik, M. P., & Bhatt, R. N. (1999) · Physical review. B, Condensed matter · doi:10.1103/physrevb.60.2292 · Cited by 5 · see citing works

Two-parameter scaling of the hopping conductivity ofn-type CdSe

Zhang, Y., & Sarachik, M. P. (1995) · Physical review. B, Condensed matter · doi:10.1103/physrevb.51.2580 · Cited by 5 · see citing works

Concerning the nature of relaxation oscillations in silicon diodes in the cryogenic temperature region

Borblik, V. L., Shwarts, Y. M., Shwarts, M. M., & Fonkich, A. (2010) · Cryogenics · doi:10.1016/j.cryogenics.2010.04.002 · Cited by 5 · see citing works

Criterion for the size of the scaling regime for the metal-insulator transition of doped semiconductors

Castner, T. G. (2003) · Physical review. B, Condensed matter · doi:10.1103/physrevb.67.193202 · Cited by 5 · see citing works

Manifestation of disorder effects in the excess tunnel current of heavily doped silicon diodes

Borblik, V. L., Shwarts, Y. M., & Shwarts, M. M. (2007) · Bulletin of the Russian Academy of Sciences Physics · doi:10.3103/s1062873807080059 · Cited by 4 · see citing works

Quantitative analysis of delocalization in the vicinity of the metal - insulator transition in doped semiconductors

Shlimak, I., Kaveh, M., Ussyshkin, R., Ginodman, V., Resnick, L., & Гантмахер, В. Ф. (1997) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/9/45/015 · Cited by 4 · see citing works

Electronic Properties of Intrinsic and Heavily Doped 3C–, nH–SiC (n = 2, 4, 6) and III-N (III = B, Al, Ga, In)

Persson, C., & da Silva, A. F. (2005) · Elsevier eBooks · doi:10.1016/b978-008044426-0/50017-1 · Cited by 3 · see citing works

Optical Properties of Selenium-Hyperdoped Si Layers: Effects of Laser and Thermal Treatment

Komarov, F. F., Vlasukova, L. A., Milchanin, O. V., Пархоменко, И. Н., Berencén, Y., Al’zhanova, A. E., Wang, T., & Żuk, J. (2023) · Journal of Applied Spectroscopy · doi:10.1007/s10812-023-01542-6 · Cited by 3 · see citing works

Influence of disorder in compensation-doped germanium on the critical indices of the metal-insulator transition

Rentzsch, R., Reich, C., Ionov, A. N., Ginodman, V., Shlimak, I., Fozooni, P., & Lea, M. J. (1999) · Physics of the Solid State · doi:10.1134/1.1130864 · Cited by 3 · see citing works

Electronic disorder of P- and B-doped Si at the metal–insulator transition investigated by scanning tunnelling microscopy and electronic transport

Sürgers, C., Wenderoth, M., Löser, K., Garleff, J. K., Ulbrich, R. G., Lukas, M., & Löhneysen, H. V. (2013) · New Journal of Physics · doi:10.1088/1367-2630/15/5/055009 · Cited by 3 · see citing works

Universality of Interfacial Superconductivity in Heavily Doped Silicon

Moun, M., Sirohi, A., & Sheet, G. (2021) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.0c01097 · Cited by 2 · see citing works

A Nearly Universal Critical Conductivity for Semiconductor-Metal Alloys

Castner, T. G. (2000) · Physical Review Letters · doi:10.1103/physrevlett.84.2905 · Cited by 2 · see citing works

Shlimaket al.Reply:

Shlimak, I., Kaveh, M., Ussyshkin, R., Ginodman, V., & Resnick, L. (1997) · Physical Review Letters · doi:10.1103/physrevlett.78.3978 · Cited by 2 · see citing works

Stress-tuned metal-insulator transition in Si:B: dynamical scaling

Bogdanovich, S., Sarachik, M. P., & Bhatt, R. N. (1999) · Annalen der Physik · doi:10.1002/(sici)1521-3889(199911)8:7/9 · Cited by 1 · see citing works

Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence

Wakita, T., Okazaki, H., Takano, Y., Hirai, M., Muraoka, Y., & Yokoya, T. (2009) · Physica C Superconductivity · doi:10.1016/j.physc.2009.11.028 · Cited by 1 · see citing works

A Study on the Hopping Nature of an Excess Tunnel Current in Heavily Doped Silicon p − n Junction Diodes at Cryogenic Temperatures

Borblik, V. L., Shwarts, Y. M., Shwarts, M. M., & Aleǐnikov, A. B. (2018) · Silicon · doi:10.1007/s12633-018-9923-z · Cited by 1 · see citing works

Cryogenic Diode Thermometer Insensitive Completely to Magnetic Fields Up to 1 T

Borblik, V. L., Shwarts, Y. M., & Shwarts, M. M. (2020) · IEEE Sensors Journal · doi:10.1109/jsen.2020.3031344 · Cited by 1 · see citing works

Quantum diffusion and scaling of localized interacting electrons

Halfpap, O. (2001) · Annalen der Physik · doi:10.1002/andp.20015130801 · Cited by 1 · see citing works

Anderson Transition in Homogeneous and Random Magnetic Fields

Krämer, B., Ohtsuki, T., & Henneke, M. (1995) · Springer eBooks · doi:10.1007/978-94-011-0019-9_2 · Cited by 1 · see citing works

Heavily Doped Semiconductors: Magnetic Moments, Electron-Electron Interactions and the MetalInsulator Transition

Löhneysen, H. V. (2003) · Springer eBooks · doi:10.1007/978-94-010-0213-4_15 · Cited by 1 · see citing works

Metal‐insulator transition in Bi‐doped, amorphous Ga:Ar mixtures: Influence of spin‐orbit scattering

Bögershausen, M., & Micklitz, H. (1992) · Annalen der Physik · doi:10.1002/andp.19925040104 · Cited by 1 · see citing works

Metal-Insulator Transition in Doped Semiconductors

Itoh, K. M. (2001) · Springer proceedings in physics · doi:10.1007/978-3-642-59484-7_54 · Cited by 1 · see citing works

Traditional Application of Stable and Radioactive Isotopes

Plekhanov, V. G. (2012) · Springer series in materials science · doi:10.1007/978-3-642-28723-7_6

Scaling and level statistics at the Anderson transition

Krämer, B., Zharekeshev, I. K., & Halfpap, O. (2007) · Advances in Solid State Physics · doi:10.1007/bfb0107483

Effect of material density on the electronic mobility of disordered metals

Alkan, B. (2001) · Physics Letters A · doi:10.1016/s0375-9601(00)00818-5

Non-ohmic hopping conduction in nanofabricated Si point contacts

Maes, J. W., Heuvelman, W., Козуб, В. И., Caro, J., & Radelaar, S. (1996) · Physica B Condensed Matter · doi:10.1016/0921-4526(95)00570-6

Magnetic properties and critical behavior of the conductivity near the M-I transition

Sarachik, M. P. (1991) · doi:10.2172/6252782

Electrical conductivity of metallic Si:B near the metal-insulator transition

Dai, P., Zhang, Y., & Sarachik, M. P. (1992) · Physical review. B, Condensed matter · doi:10.1103/physrevb.45.3984 · Cited by 140 · see citing works

Critical conductivity exponent of Si:P in a magnetic field

Dai, P., Zhang, Y., Bogdanovich, S., & Sarachik, M. P. (1993) · Physical review. B, Condensed matter · doi:10.1103/physrevb.48.4941 · Cited by 27 · see citing works

Hopping conduction in uniaxially stressed Si:B near the insulator-metal transition

Bogdanovich, S., Simonian, D., Kravchenko, S. V., Sarachik, M. P., & Bhatt, R. N. (1999) · Physical review. B, Condensed matter · doi:10.1103/physrevb.60.2286 · Cited by 7 · see citing works

Determination of the Critical Conductivity Exponent for the Metal-Insulator Transition at Nonzero Temperatures: Universality of the Transition

Shlimak, I., Kaveh, M., Ussyshkin, R., Ginodman, V., & Resnick, L. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.1103 · Cited by 43 · see citing works