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Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon
Abstract
The effect of thermal and structural disorder on the electronic structure of hydrogenated amorphous silicon is investigated by measurement of the shape of the optical absorption edge as a function of temperature and thermal evolution of hydrogen. The data are consistent with the idea that the thermal and structural disorder are additive, and suggest that the disorder, rather than the hydrogen content, is the fundamental determining factor in the optical band gap.
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Citations
Cited by
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Robertson, J. (1991) · Progress in Solid State Chemistry · doi:10.1016/0079-6786(91)90002-h · Cited by 787
Dolgonos, A., Mason, T. O., & Poeppelmeier, K. R. (2016) · Journal of Solid State Chemistry · doi:10.1016/j.jssc.2016.05.010 · Cited by 455
Optical Gaps of Organic Solar Cells as a Reference for Comparing Voltage Losses
Wang, Y., Qian, D., Cui, Y., Zhang, H., Hou, J., Vandewal, K., Kirchartz, T., & Gao, F. (2018) · Advanced Energy Materials · doi:10.1002/aenm.201801352 · Cited by 448
Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials
Shin, D., Saparov, B., & Mitzi, D. B. (2017) · Advanced Energy Materials · doi:10.1002/aenm.201602366 · Cited by 357
O’Leary, S. K., Johnson, S. R., & Lim, P. K. (1997) · Journal of Applied Physics · doi:10.1063/1.365643 · Cited by 311
Metadata
- Authors
- Cody, G. D., Tiedje, T., Abeles, B., Brooks, B., & Goldstein, Y.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1981-11-16
- Volume
- 47
- Issue
- 20
- Pages
- 1480-1483
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W1985133623
- Cited by
- 1,229
- References
- 0
- FWCI
- 40.31
- Type
- journal article
- Language
- en
- Open access
- closed
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- Cody, G. D., Tiedje, T., Abeles, B., Brooks, B., & Goldstein, Y. (1981). Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon. Physical Review Letters. https://doi.org/10.1103/physrevlett.47.1480
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