The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.
The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis
Abstract
An elementary empirical model for the distribution of electronic states of an amorphous semiconductor is presented. Using this model, we determine the functional form of the optical absorption spectrum, focusing our analysis on the joint density of states function, which dominates the absorption spectrum over the range of photon energies we consider. Applying our optical absorption results, we then determine how the empirical measures commonly used to characterize the absorption edge of an amorphous semiconductor, such as the Tauc gap and the absorption tail breadth, are related to the parameters that characterize the underlying distribution of electronic states. We, thus, provide the experimentalist with a quantitative means of interpreting the physical significance of their optical absorption data.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Optical Properties and Electronic Structure of Amorphous Germanium
Tauc, J., Grigorovici, R., & Vancu, A. (1966) · physica status solidi (b) · doi:10.1002/pssb.19660150224 · Cited by 11,071
Electronic Processes in Non-Crystalline Materials
Mott, N. F., Davis, E. A., & Lösche, A. (1972) · Kristall und Technik Band 7, Heft 4 · doi:10.1515/9783112653326-018 · Cited by 9,295
Amorphous and Liquid Semiconductors
(1974) · Springer eBooks · doi:10.1007/978-1-4615-8705-7 · Cited by 6,370
Electrons in disordered structures
Mott, N. F. (1967) · Advances in Physics · doi:10.1080/00018736700101265 · Cited by 1,765
Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon
Cody, G. D., Tiedje, T., Abeles, B., Brooks, B., & Goldstein, Y. (1981) · Physical Review Letters · doi:10.1103/physrevlett.47.1480 · Cited by 1,229
Semiconductor physics and devices
(2006) · Materials Today · doi:10.1016/s1369-7021(06)71498-5 · Cited by 792
Impurity-Band Tails in the High-Density Limit. I. Minimum Counting Methods
Halperin, B. I., & Lax, M. (1966) · Physical Review · doi:10.1103/physrev.148.722 · Cited by 744
Thomas-Fermi Approach to Impure Semiconductor Band Structure
Kane, E. O. (1963) · Physical Review · doi:10.1103/physrev.131.79 · Cited by 655
Evidence for Exponential Band Tails in Amorphous Silicon Hydride
Tiedje, T., Cebulka, J. M., Morel, D. L., & Abeles, B. (1981) · Physical Review Letters · doi:10.1103/physrevlett.46.1425 · Cited by 520
Conduction in non-crystalline systems: I. localized electronic states in disordered systems
Mott, N. F. (1968) · Philosophical Magazine · doi:10.1080/14786436808223200 · Cited by 470
Cited by
Refractive index of thin films of SiO_2, ZrO_2, and HfO_2 as a function of the films’ mass density
Jerman, M., Qiao, Z., & Mergel, D. (2005) · Applied Optics · doi:10.1364/ao.44.003006 · Cited by 154
Metadata
- Authors
- O’Leary, S. K., Johnson, S. R., & Lim, P. K.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1997-10-01
- Volume
- 82
- Issue
- 7
- Pages
- 3334-3340
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2056595302
- Cited by
- 311
- References
- 13
- FWCI
- 2.29
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis. https://app.cochat.ai/papers/10.1063/1.365643
- The paper
- O’Leary, S. K., Johnson, S. R., & Lim, P. K. (1997). The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis. Journal of Applied Physics. https://doi.org/10.1063/1.365643
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
