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Conductance in Restricted-Dimensionality Accumulation Layers
Abstract
Conductance has been studied in metal-oxide-silicon field-effect transistor accumulation-layer samples in which it is possible to constrict the channel to small dimensions both perpendicular to the surface and perpendicular to the channel. A temperature-dependent conductance $\ensuremath{\sigma}={\ensuremath{\sigma}}_{0}\mathrm{exp}[\ensuremath{-}{(\frac{{T}_{0}}{T})}^{n}]$ is observed, where $n=\frac{1}{2}$ for small channel widths and $n=\frac{1}{3}$ for larger channel widths. It is believed that this behavior arises from a transition from one-dimensional to two-dimensional variable-range hopping in the sample.
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Citations
Cited by
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Washburn, S., & Webb, R. A. (1986) · Advances in Physics · doi:10.1080/00018738600101921 · Cited by 810
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Stone, A. D. (1985) · Physical Review Letters · doi:10.1103/physrevlett.54.2692 · Cited by 375
Conductance Oscillations Periodic in the Density of a One-Dimensional Electron Gas
Scott-Thomas, J. H. F., Field, S. B., Kastner, M. A., Smith, H. I., & Antoniadis, D. A. (1989) · Physical Review Letters · doi:10.1103/physrevlett.62.583 · Cited by 353
Metadata
- Authors
- Fowler, A. B., Hartstein, A., & Webb, R. A.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1982-01-18
- Volume
- 48
- Issue
- 3
- Pages
- 196-199
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W2059239926
- Cited by
- 318
- References
- 0
- FWCI
- 28.75
- Type
- journal article
- Language
- en
- Open access
- closed
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