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Cited by 563

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Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

Thompson, Michael O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G., Chew, N. G.·1984·Physical Review Letters

Abstract

Measurements during pulsed laser irradiation indicate that amorphous Si melts at a temperature 200 \ifmmode\pm\else\textpm\fi{} 50 K below the crystalline value. Below energy densities required to melt the amorphous layer fully, the data are interpreted in terms of an explosive crystallization. The initial liquid layer solidifies to form coarse-grained polycrystalline Si. A thin, self-propagating liquid layer travels through the remaining amorphous Si at a velocity of 10-20 m/s, producing fine-grained polycrystalline Si.

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Metadata

Authors
Thompson, M. O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G., & Chew, N. G.
Venue
Physical Review Letters
Published
1984-06-25
Volume
52
Issue
26
Pages
2360-2363
ISSN
0031-9007 (ISSN-L)
OpenAlex
W2083549953
Cited by
563
References
0
FWCI
41.95
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation. https://app.cochat.ai/papers/10.1103/physrevlett.52.2360
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Thompson, M. O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G., & Chew, N. G. (1984). Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation. Physical Review Letters. https://doi.org/10.1103/physrevlett.52.2360

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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