The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
Abstract
We report the observation of two-dimensional electron systems and enhanced mobilities in Si/${\mathrm{Si}}_{0.5}$${\mathrm{Ge}}_{0.5}$ strained-layer multilayer structures. The built-in strain is measured by phonon Raman spectroscopy. The mobility enhancement depends strongly on the position of the doped region within the layers. The experimental results can be explained in a consistent way when carrier confinement in the Si layer is assumed. The importance of the built-in strain in lowering the conduction band in Si is emphasized.
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Citations
Cites
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Effect of static uniaxial stress on the Raman spectrum of silicon
Anastassakis, E., Pinczuk, A., Burstein, E., et al. (1970) · Solid State Communications · doi:10.1016/0038-1098(70)90588-0 · Cited by 605
Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium
Balslev, I. (1966) · Physical Review · doi:10.1103/physrev.143.636 · Cited by 474
Two-dimensional electron gas at a semiconductor-semiconductor interface
Störmer, H. L., Dingle, R., Gossard, A. C., Wiegmann, W., & Sturge, M. D. (1979) · Solid State Communications · doi:10.1016/0038-1098(79)91010-x · Cited by 456
Cyclotron resonance of electrons in surface space-charge layers on silicon
Abstreiter, G., Kotthaus, J. P., Koch, J. F., & Dorda, G. (1976) · Physical Review B · doi:10.1103/physrevb.14.2480 · Cited by 189
Self-citation
Cited by
Metamorphic materials for quantum computing
Deelman, P. W., Edge, L. F., & Jackson, C. A. (2016) · MRS Bulletin · doi:10.1557/mrs.2016.28 · Cited by 18
Metadata
- Authors
- Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., & Herzog, H. J.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1985-06-03
- Volume
- 54
- Issue
- 22
- Pages
- 2441-2444
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W1977894028
- Cited by
- 498
- References
- 5
- FWCI
- 47.39
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., & Herzog, H. J. (1985). Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices. Physical Review Letters. https://doi.org/10.1103/physrevlett.54.2441
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
