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Single-electron charging of quantum-dot atoms

Meurer, B., Heitmann, D., Ploog, K.·1992·Physical Review Letters

Abstract

Arrays of field-effect-confined quantum dots with diameters smaller than 100 nm have been prepared starting from ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As-GaAs heterostructures. In far-infrared spectroscopy, we induce transitions between the 2-meV-separated quantum levels. We observe discrete steps in the gate-voltage dependence of the integrated absorption strength indicating directly the incremental occupation of each dot with N=1, 2, 3, and 4 electrons. From the gate-voltage dependence, we can estimate a Coulomb charging energy of about 15 meV. On a very fine scale, we also observe a spectral fine structure for the excitation of the quantum-dot atoms.

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Metadata

Authors
Meurer, B., Heitmann, D., & Ploog, K.
Venue
Physical Review Letters
Published
1992-03-02
Volume
68
Issue
9
Pages
1371-1374
ISSN
0031-9007 (ISSN-L)
OpenAlex
W2065832212
Cited by
291
References
0
FWCI
19.56
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Single-electron charging of quantum-dot atoms. https://app.cochat.ai/papers/10.1103/physrevlett.68.1371
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Meurer, B., Heitmann, D., & Ploog, K. (1992). Single-electron charging of quantum-dot atoms. Physical Review Letters. https://doi.org/10.1103/physrevlett.68.1371

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