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Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
Abstract
Ferromagnetic-insulator-ferromagnetic tunneling has been measured in CoFe $/$A${\mathrm{l}}_{2}$${\mathrm{O}}_{3}$ $/$Co or NiFe junctions. At 295, 77, and 4.2 K the fractional change in junction resistance with magnetic field, $\ensuremath{\Delta}R/R$, is 11.8%, 20%, and 24%, respectively. The value at 4.2 K is consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films. $\ensuremath{\Delta}R/R$ changes little with a small voltage bias, whereas it decreases significantly at higher bias $(>0.1\mathrm{V})$, in qualitative agreement with Slonczewski's model. These junctions have potential use as low-power field sensors and memory elements.
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Cited by
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Tserkovnyak, Y., Brataas, A., Bauer, G. E. W., & Halperin, B. I. (2005) · Reviews of Modern Physics · doi:10.1103/revmodphys.77.1375 · Cited by 1,315
Magnetic sensors and their applications
Lenz, J., & Edelstein, S. (2006) · IEEE Sensors Journal · doi:10.1109/jsen.2006.874493 · Cited by 1,312
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
A new spin on magnetic memories
Kent, A. D., & Worledge, D. C. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.24 · Cited by 873
Bader, S. D., & Parkin, S. S. P. (2010) · Annual Review of Condensed Matter Physics · doi:10.1146/annurev-conmatphys-070909-104123 · Cited by 700
Metadata
- Authors
- Moodera, J. S., Kinder, L. R., Wong, T. M., & Meservey, R.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1995-04-17
- Volume
- 74
- Issue
- 16
- Pages
- 3273-3276
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1967393072
- Cited by
- 3,707
- References
- 0
- FWCI
- 41.74
- Type
- journal article
- Language
- en
- Open access
- closed
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- Moodera, J. S., Kinder, L. R., Wong, T. M., & Meservey, R. (1995). Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions. Physical Review Letters. https://doi.org/10.1103/physrevlett.74.3273
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