The DOI matches its Crossref record; 22 of the 22 references it cites were found in a registry or an index.
A new spin on magnetic memories
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Citations
Cites
Current-driven excitation of magnetic multilayers
Slonczewski, J. C. (1996) · Journal of Magnetism and Magnetic Materials · doi:10.1016/0304-8853(96)00062-5 · Cited by 6,825
Emission of spin waves by a magnetic multilayer traversed by a current
Berger, L. (1996) · Physical Review B · doi:10.1103/physrevb.54.9353 · Cited by 4,898
Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
Liu, L., Pai, C.-F., Li, Y., Tseng, H. W., Ralph, D. C., & Buhrman, R. A. (2012) · Science · doi:10.1126/science.1218197 · Cited by 4,108
Tunneling between ferromagnetic films
Julliere, M. (1975) · Physics Letters A · doi:10.1016/0375-9601(75)90174-7 · Cited by 4,003
Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
Moodera, J. S., Kinder, L. R., Wong, T. M., & Meservey, R. (1995) · Physical Review Letters · doi:10.1103/physrevlett.74.3273 · Cited by 3,707
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Ikeda, S., Miura, K., Yamamoto, H., Mizunuma, K., Gan, H. D., Endo, M., Kanai, S., Hayakawa, J., Matsukura, F., & Ohno, H. (2010) · Nature Materials · doi:10.1038/nmat2804 · Cited by 3,626
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
Yuasa, S., Nagahama, T., Fukushima, A., Suzuki, Y., & Ando, K. (2004) · Nature Materials · doi:10.1038/nmat1257 · Cited by 3,331
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Parkin, S. S. P., Kaiser, C., Panchula, A., Rice, P. M., Hughes, B., Samant, M., & Yang, S.-H. (2004) · Nature Materials · doi:10.1038/nmat1256 · Cited by 3,320
Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches
Butler, W. H., Zhang, X.-G., Schulthess, T. C., & MacLaren, J. M. (2001) · Physical Review B · doi:10.1103/physrevb.63.054416 · Cited by 2,102
Giant magnetic tunneling effect in Fe/Al2O3/Fe junction
Miyazaki, T., & Tezuka, N. (1995) · Journal of Magnetism and Magnetic Materials · doi:10.1016/0304-8853(95)90001-2 · Cited by 1,917
Cited by
Memory devices and applications for in-memory computing
Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R., & Eleftheriou, E. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0655-z · Cited by 2,289
In-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
“Due to its higher stability and better endurance, STT-MRAM devices appear to be the best device option to implement TRNGs.”
BackgroundInfluentialBarman, A., Gubbiotti, G., Ladak, S., Adeyeye, A. O., Krawczyk, M., Gräfe, J., Adelmann, C., Cotofana, S., Naeemi, A., Vasyuchka, V. I., et al. (2021) · Journal of Physics: Condensed Matter · doi:10.1088/1361-648x/abec1a · Cited by 574
Wang, M., Cai, W., Zhu, D., Wang, Z., Kan, J., Zhao, Z., Cao, K., Wang, Z., Zhang, Y., Zhang, T., et al. (2018) · Nature Electronics · doi:10.1038/s41928-018-0160-7 · Cited by 482
Reliability of analog resistive switching memory for neuromorphic computing
Zhao, M., Gao, B., Tang, J., Qian, H., & Wu, H. (2020) · Applied Physics Reviews · doi:10.1063/1.5124915 · Cited by 349
Metadata
- Authors
- Kent, A. D., & Worledge, D. C.
- Venue
- Nature Nanotechnology
- Published
- 2015-03
- Volume
- 10
- Issue
- 3
- Pages
- 187-191
- ISSN
- 1748-3387 (ISSN-L)
- 1748-3395
- OpenAlex
- W2019378533
- Cited by
- 873
- References
- 22
- FWCI
- 37.36
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kent, A. D., & Worledge, D. C. (2015). A new spin on magnetic memories. Nature Nanotechnology. https://doi.org/10.1038/nnano.2015.24
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
