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Cited by 305

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Charge Accumulation at InAs Surfaces

Olsson, L. Ö., Andersson, C. B. M., Håkansson, M. C., Kanski, J., Ilver, L., Karlsson, U. O.·1996·Physical Review Letters

Abstract

Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the conduction band minimum determined by the surface geometry. The emission from states in the accumulation layer is studied with respect to its photon energy and angular dependence.

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Metadata

Authors
Olsson, L. Ö., Andersson, C. B. M., Håkansson, M. C., Kanski, J., Ilver, L., & Karlsson, U. O.
Venue
Physical Review Letters
Published
1996-05-06
Volume
76
Issue
19
Pages
3626-3629
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W1996869852
Cited by
305
References
1
FWCI
5.52
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Charge Accumulation at InAs Surfaces. https://app.cochat.ai/papers/10.1103/physrevlett.76.3626
The paper
Olsson, L. Ö., Andersson, C. B. M., Håkansson, M. C., Kanski, J., Ilver, L., & Karlsson, U. O. (1996). Charge Accumulation at InAs Surfaces. Physical Review Letters. https://doi.org/10.1103/physrevlett.76.3626

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.