The DOI matches its Crossref record; 12 of the 12 references it cites were found in a registry or an index.
Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
Abstract
Using first-principles supercell calculations we find a giant (7--16 eV) and composition-dependent optical bowing coefficient in ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$ alloys. We show that both effects are due to the formation in the alloy of spatially separated and sharply localized band edge states. Our analysis suggests that in semiconductor alloys band gap variation as a function of $x$ can be divided into two regions: (i) a bandlike region where the bowing coefficient is relatively small and nearly constant, and (ii) an impuritylike region where the bowing coefficient is relatively larger and composition dependent. For ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$ the impuritylike behavior persists even for concentrated alloys.
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Citations
Cites
Special quasirandom structures
Zunger, A., Wei, S.-H., Ferreira, L. G., & Bernard, J. E. (1990) · Physical Review Letters · doi:10.1103/physrevlett.65.353 · Cited by 3,935
Self-citationElectronic properties of random alloys: Special quasirandom structures
Wei, S.-H., Ferreira, L. G., Bernard, J. E., & Zunger, A. (1990) · Physical Review B · doi:10.1103/physrevb.42.9622 · Cited by 1,064
Self-citationBand offsets and optical bowings of chalcopyrites and Zn-based II-VI alloys
Wei, S.-H., & Zunger, A. (1995) · Journal of Applied Physics · doi:10.1063/1.359901 · Cited by 504
Self-citationLocal-Density-Functional Calculation of the Pressure-Induced Metallization of BaSe and BaTe
Wei, S.-H., & Krakauer, H. (1985) · Physical Review Letters · doi:10.1103/physrevlett.55.1200 · Cited by 502
Self-citationExtended x-ray-absorption fine-structure study ofGa1−xInxAsrandom solid solutions
Mikkelsen, J. C., & Boyce, J. B. (1983) · Physical Review B · doi:10.1103/physrevb.28.7130 · Cited by 472
Mikkelsen, J. C., & Boyce, J. B. (1982) · Physical Review Letters · doi:10.1103/physrevlett.49.1412 · Cited by 450
Electronic structure of ZnS, ZnSe, ZnTe, and their pseudobinary alloys
Bernard, J. E., & Zunger, A. (1987) · Physical Review B · doi:10.1103/physrevb.36.3199 · Cited by 440
Self-citationBond lengths around isovalent impurities and in semiconductor solid solutions
Martins, J. L., & Zunger, A. (1984) · Physical Review B · doi:10.1103/physrevb.30.6217 · Cited by 435
Self-citationFirst-principles statistical mechanics of structural stability of intermetallic compounds
Lu, Z. W., Wei, S.-H., Zunger, A., Frota-Pessoa, S., & Ferreira, L. G. (1991) · Physical Review B · doi:10.1103/physrevb.44.512 · Cited by 304
Self-citationFirst-principles calculation of temperature-composition phase diagrams of semiconductor alloys
Wei, S.-H., Ferreira, L. G., & Zunger, A. (1990) · Physical Review B · doi:10.1103/physrevb.41.8240 · Cited by 290
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Metadata
- Authors
- Wei, S.-H., & Zunger, A.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1996-01-22
- Volume
- 76
- Issue
- 4
- Pages
- 664-667
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2085395832
- Cited by
- 549
- References
- 12
- FWCI
- 13.92
- Type
- journal article
- Language
- en
- Open access
- closed
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