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Gate-Voltage Studies of Discrete Electronic States in Aluminum Nanoparticles
Open accessAbstract
We have investigated the spectrum of discrete electronic states in single, nm-scale Al particles incorporated into new tunneling transistors, complete with a gate electrode. The addition of the gate has allowed (a) measurements of the electronic spectra for different numbers of electrons in the same particle, (b) greatly improved resolution and qualitatively new results for spectra within superconducting particles, and (c) detailed studies of the gate-voltage dependence of the resonance level widths, which have directly demonstrated the effects of nonequilibrium excitations.
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Cited by
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Bunch, J. S., Yaish, Y., Brink, M., Bolotin, K., & McEuen, P. L. (2005) · Nano Letters · doi:10.1021/nl048111+ · Cited by 312
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Hod, O., Baer, R., & Rabani, E. (2008) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/20/38/383201 · Cited by 40
Metadata
- Authors
- Ralph, D. C., Black, C. T., & Tinkham, M.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1997-05-26
- Volume
- 78
- Issue
- 21
- Pages
- 4087-4090
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2022289856
- Cited by
- 334
- References
- 0
- FWCI
- 21.81
- Type
- journal article
- Language
- en
- Open access
- green
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- Ralph, D. C., Black, C. T., & Tinkham, M. (1997). Gate-Voltage Studies of Discrete Electronic States in Aluminum Nanoparticles. Physical Review Letters. https://doi.org/10.1103/physrevlett.78.4087
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