The DOI matches its Crossref record; 106 of the 106 references it cites were found in a registry or an index.
Single-electron devices and their applications
Abstract
The goal of this paper is to review in brief the basic physics of single-election devices, as well as their-current and prospective applications. These devices based on the controllable transfer of single electrons between small conducting "islands", have already enabled several important scientific experiments. Several other applications of analog single-election devices in unique scientific instrumentation and metrology seem quite feasible. On the other hand, the prospect of silicon transistors being replaced by single-electron devices in integrated digital circuits faces tough challenges and remains uncertain. Nevertheless, even if this replacement does not happen, single electronics will continue to play an important role by shedding light on the fundamental size limitations of new electronic devices. Moreover, recent research in this field has generated some by-product ideas which may revolutionize random-access-memory and digital-data-storage technologies.
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Cites
Quantum computation with quantum dots
Loss, D., & DiVincenzo, D. P. (1998) · Physical Review A · doi:10.1103/physreva.57.120 · Cited by 6,840
Introduction to Superconductivity
Tinkham, M., & Emery, V. (1996) · Physics Today · doi:10.1063/1.2807811 · Cited by 6,601
Principles of the Theory of Solids
Ziman, J. M. (1972) · Cambridge University Press eBooks · doi:10.1017/cbo9781139644075 · Cited by 4,147
Individual single-wall carbon nanotubes as quantum wires
Tans, S. J., Devoret, M. H., Dai, H., Thess, A., Smalley, R. E., Geerligs, L. J., & Dekker, C. (1997) · Nature · doi:10.1038/386474a0 · Cited by 2,939
Random-matrix theory of quantum transport
Beenakker, C. W. J. (1997) · Reviews of Modern Physics · doi:10.1103/revmodphys.69.731 · Cited by 2,551
Likharev, K. K., & Semenov, V. K. (1991) · IEEE Transactions on Applied Superconductivity · doi:10.1109/77.80745 · Cited by 2,123
Self-citationSingle Charge Tunneling: Coulomb Blockade Phenomena In Nanostructures
(1992) · NATO ASI Series · doi:10.1007/978-1-4757-2166-9 · Cited by 2,076
Lent, C. S., Tougaw, P. D., Porod, W., & Bernstein, G. H. (1993) · Nanotechnology · doi:10.1088/0957-4484/4/1/004 · Cited by 1,793
A silicon nanocrystals based memory
Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbé, E. F., & Chan, K. (1996) · Applied Physics Letters · doi:10.1063/1.116085 · Cited by 1,629
Theory of Coulomb-blockade oscillations in the conductance of a quantum dot
Beenakker, C. W. J. (1991) · Physical Review B · doi:10.1103/physrevb.44.1646 · Cited by 1,471
Cited by
Metal nanocrystal memories. I. Device design and fabrication
Liu, Z., Lee, C., Narayanan, V., Pei, G., & Kan, E. C. (2002) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2002.802617 · Cited by 482
CrossNets: High‐Performance Neuromorphic Architectures for CMOL Circuits
LIKHAREV, K., MAYR, A., MUCKRA, I., & TÜREL, Ö. (2003) · Annals of the New York Academy of Sciences · doi:10.1196/annals.1292.010 · Cited by 121
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Metadata
- Authors
- Likharev, K. K.
- Venue
- Proceedings of the IEEE
- Published
- 1999-04
- Volume
- 87
- Issue
- 4
- Pages
- 606-632
- ISSN
- 0018-9219 (ISSN-L)
- OpenAlex
- W2102986313
- Cited by
- 1,453
- References
- 106
- FWCI
- 30.98
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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