The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Role of Fermi-Level Pinning in Nanotube Schottky Diodes
Open accessAbstract
At semiconductor-metal junctions, the Schottky barrier height is generally fixed by "Fermi-level pinning." We find that when a semiconducting carbon nanotube is end contacted to a metal (the optimal geometry for nanodevices), the behavior is radically different. Even when the Fermi level is fully "pinned" at the interface, the turn-on voltage is that expected for an unpinned junction. Thus the threshold may be adjusted for optimal device performance, which is not possible in planar contacts. Similar behavior is expected at heterojunctions between nanotubes and semiconductors.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Electronic Transport in Mesoscopic Systems
Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704
Cited by
Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes
Martel, R., Derycke, V., Lavoie, C., Appenzeller, J., Chan, K. K., Tersoff, J., & Avouris, P. (2001) · Physical Review Letters · doi:10.1103/physrevlett.87.256805 · Cited by 803
Self-citation
Metadata
- Authors
- Léonard, F., & Tersoff, J.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2000-05-15
- Volume
- 84
- Issue
- 20
- Pages
- 4693-4696
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2022328095
- Cited by
- 384
- References
- 1
- FWCI
- 8.06
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Role of Fermi-Level Pinning in Nanotube Schottky Diodes. https://app.cochat.ai/papers/10.1103/physrevlett.84.4693
- The paper
- Léonard, F., & Tersoff, J. (2000). Role of Fermi-Level Pinning in Nanotube Schottky Diodes. Physical Review Letters. https://doi.org/10.1103/physrevlett.84.4693
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
