The DOI matches its Crossref record; 11 of the 11 references it cites were found in a registry or an index.
Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes
Abstract
Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers--the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.
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Cites
Nanotube Molecular Wires as Chemical Sensors
Kong, J., Franklin, N. R., Zhou, C., Chapline, M. G., Peng, S., Cho, K., & Dai, H. (2000) · Science · doi:10.1126/science.287.5453.622 · Cited by 6,043
Crystalline Ropes of Metallic Carbon Nanotubes
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Room-temperature transistor based on a single carbon nanotube
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Extreme Oxygen Sensitivity of Electronic Properties of Carbon Nanotubes
Collins, P. G., Bradley, K., Ishigami, M., & Zettl, A. (2000) · Science · doi:10.1126/science.287.5459.1801 · Cited by 2,974
Single- and multi-wall carbon nanotube field-effect transistors
Martel, R., Schmidt, T., Shea, H. R., Hertel, T., & Avouris, P. (1998) · Applied Physics Letters · doi:10.1063/1.122477 · Cited by 2,812
Self-citationEngineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown
Collins, P. G., Arnold, M. S., & Avouris, P. (2001) · Science · doi:10.1126/science.1058782 · Cited by 1,728
Self-citationCarbon Nanotube Inter- and Intramolecular Logic Gates
Derycke, V., Martel, R., Appenzeller, J., & Avouris, P. (2001) · Nano Letters · doi:10.1021/nl015606f · Cited by 1,053
Self-citationRole of Fermi-Level Pinning in Nanotube Schottky Diodes
Léonard, F., & Tersoff, J. (2000) · Physical Review Letters · doi:10.1103/physrevlett.84.4693 · Cited by 384
Self-citationZhou, C., Kong, J., & Dai, H. (2000) · Applied Physics Letters · doi:10.1063/1.126107 · Cited by 244
Intrinsic Electrical Properties of Individual Single-Walled Carbon Nanotubes with Small Band Gaps
Zhou, C., Kong, J., & Dai, H. (2000) · Physical Review Letters · doi:10.1103/physrevlett.84.5604 · Cited by 221
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Theory of Electronic States and Transport in Carbon Nanotubes
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Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
Wind, S. J., Appenzeller, J., Martel, R., Derycke, V., & Avouris, P. (2002) · Applied Physics Letters · doi:10.1063/1.1480877 · Cited by 668
Self-citationHigh-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities
Lin, Y.-M., Appenzeller, J., Knoch, J., & Avouris, P. (2005) · IEEE Transactions On Nanotechnology · doi:10.1109/tnano.2005.851427 · Cited by 499
Self-citationA review on inkjet printing of nanoparticle inks for flexible electronics
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Metadata
- Authors
- Martel, R., Derycke, V., Lavoie, C., Appenzeller, J., Chan, K. K., Tersoff, J., & Avouris, P.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2001-12-03
- Volume
- 87
- Issue
- 25
- Pages
- 256805-256805
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2035816549
- Cited by
- 803
- References
- 11
- FWCI
- 33.69
- Type
- journal article
- Language
- en
- Open access
- closed
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- Martel, R., Derycke, V., Lavoie, C., Appenzeller, J., Chan, K. K., Tersoff, J., & Avouris, P. (2001). Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes. Physical Review Letters. https://doi.org/10.1103/physrevlett.87.256805
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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