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Cited by 803

The DOI matches its Crossref record; 11 of the 11 references it cites were found in a registry or an index.

Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes

Martel, R., Derycke, V., Lavoie, C., Appenzeller, J., Chan, K. K., Tersoff, J., Avouris, Ph.·2001·Physical Review Letters

Abstract

Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers--the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.

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Crossref · 10.1103/physrevlett.87.256805

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Metadata

Authors
Martel, R., Derycke, V., Lavoie, C., Appenzeller, J., Chan, K. K., Tersoff, J., & Avouris, P.
Venue
Physical Review Letters
Published
2001-12-03
Volume
87
Issue
25
Pages
256805-256805
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2035816549
Cited by
803
References
11
FWCI
33.69
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes. https://app.cochat.ai/papers/10.1103/physrevlett.87.256805
The paper
Martel, R., Derycke, V., Lavoie, C., Appenzeller, J., Chan, K. K., Tersoff, J., & Avouris, P. (2001). Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes. Physical Review Letters. https://doi.org/10.1103/physrevlett.87.256805

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.