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Cited by 693

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Band-Structure Trend in Hole-Doped Cuprates and Correlation withTcmax

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Pavarini, E., Dasgupta, I., Saha-Dasgupta, T., Jepsen, O., Andersen, O. K.·2001·Physical Review Letters

Abstract

By calculation and analysis of the bare conduction bands in a large number of hole-doped high-temperature superconductors, we have identified the range of the intralayer hopping as the essential, material-dependent parameter. It is controlled by the energy of the axial orbital, a hybrid between Cu 4s, apical-oxygen 2p(z), and farther orbitals. Materials with higher T(c max) have larger hopping ranges and axial orbitals more localized in the CuO2 layers.

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Metadata

Authors
Pavarini, E., Dasgupta, I., Saha-Dasgupta, T., Jepsen, O., & Andersen, O. K.
Venue
Physical Review Letters
Published
2001-07-10
Volume
87
Issue
4
Pages
047003-047003
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2079487020
Cited by
693
References
1
FWCI
11.45
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Band-Structure Trend in Hole-Doped Cuprates and Correlation withTcmax. https://app.cochat.ai/papers/10.1103/physrevlett.87.047003
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Pavarini, E., Dasgupta, I., Saha-Dasgupta, T., Jepsen, O., & Andersen, O. K. (2001). Band-Structure Trend in Hole-Doped Cuprates and Correlation withTcmax. Physical Review Letters. https://doi.org/10.1103/physrevlett.87.047003

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