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Cited by 537

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Band Structure, Phonon Scattering, and the Performance Limit of Single-Walled Carbon Nanotube Transistors

Open access
Zhou, Xinjian, Park, Ji-Yong, Huang, Shaoming, Liu, Jie, McEuen, Paul L.·2005·Physical Review Letters

Abstract

Semiconducting single-walled carbon nanotubes are studied in the diffusive transport regime. The peak mobility is found to scale with the square of the nanotube diameter and inversely with temperature. The maximum conductance, corrected for the contacts, is linear in the diameter and inverse temperature. These results are in good agreement with theoretical predictions for acoustic phonon scattering in combination with the unusual band structure of nanotubes. These measurements set the upper bound for the performance of nanotube transistors operating in the diffusive regime.

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Crossref · 10.1103/physrevlett.95.146805

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Metadata

Authors
Zhou, X., Park, J.-Y., Huang, S., Liu, J., & McEuen, P. L.
Venue
Physical Review Letters
Published
2005-09-30
Volume
95
Issue
14
Pages
146805-146805
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W1993382449
Cited by
537
References
2
FWCI
14.91
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Band Structure, Phonon Scattering, and the Performance Limit of Single-Walled Carbon Nanotube Transistors. https://app.cochat.ai/papers/10.1103/physrevlett.95.146805
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Zhou, X., Park, J.-Y., Huang, S., Liu, J., & McEuen, P. L. (2005). Band Structure, Phonon Scattering, and the Performance Limit of Single-Walled Carbon Nanotube Transistors. Physical Review Letters. https://doi.org/10.1103/physrevlett.95.146805

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