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Influence of Nitrogen Doping on the Defect Formation and Surface Properties ofTiO2Rutile and Anatase
Abstract
Nitrogen doping-induced changes in the electronic properties, defect formation, and surface structure of TiO2 rutile(110) and anatase(101) single crystals were investigated. No band gap narrowing is observed, but N doping induces localized N 2p states within the band gap just above the valence band. N is present in a N(III) valence state, which facilitates the formation of oxygen vacancies and Ti 3d band gap states at elevated temperatures. The increased O vacancy formation triggers the 1 x 2 reconstruction of the rutile (110) surface. This thermal instability may degrade the catalyst during applications.
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Cites
Electrochemical Photolysis of Water at a Semiconductor Electrode
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Review of the anatase to rutile phase transformation
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Metadata
- Authors
- Batzill, M., Morales, E. H., & Diebold, U.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2006-01-20
- Volume
- 96
- Issue
- 2
- Pages
- 026103-026103
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2003120420
- Cited by
- 671
- References
- 2
- FWCI
- 29.67
- Type
- journal article
- Language
- en
- Open access
- closed
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- Batzill, M., Morales, E. H., & Diebold, U. (2006). Influence of Nitrogen Doping on the Defect Formation and Surface Properties ofTiO2Rutile and Anatase. Physical Review Letters. https://doi.org/10.1103/physrevlett.96.026103
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