The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index; none of the 8 sources its claims cite is checked for support yet.
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Open accessAbstract
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.
Overview
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Written from the paper’s full text.
TL;DR
The paper reports that bilayer graphene can be converted into a semiconductor whose band gap is externally tunable by gate bias, with the gap ranging from zero to mid-infrared energies. Magnetotransport measurements and tight-binding modeling show clear gap signatures, including a zero Hall conductivity plateau and an asymmetric cyclotron mass.
Key findings
- In biased bilayer graphene, a plateau at zero Hall conductivity appears at the neutrality point, unlike the pristine case; the longitudinal resistivity at neutrality exceeded 150 kΩ at 4 K for the biased device, compared with 6 kΩ for the unbiased device under the same conditions.
- The cyclotron mass depends asymmetrically on carrier density, and comparison with tight-binding theory yields an interlayer hopping parameter of 0.22 eV and indicates gaps larger than 0.2 eV.
- A small-bias linear fit to the screened theory gives a gap of about 1.2 meV per volt relative to a gate voltage of 25 V, while the theory predicts gap saturation at the interlayer hopping scale.
- The model agrees well with angle-resolved photoemission data, except in the gap saturation regime around densities of about 50 × 10¹² cm⁻².
Methods
- Bilayer graphene devices were prepared by micromechanical cleavage on 300 nm SiO₂ and patterned into Hall bars; carrier density was controlled by a Si backgate and by NH₃ chemical doping, with transport measured by lock-in techniques in fields up to 12 T and temperatures from 4 to 300 K.
- Shubnikov–de Haas oscillations were measured versus temperature and fitted to extract the cyclotron mass as a function of carrier density.
- The data were interpreted with a Bernal-stacked bilayer tight-binding model using in-plane hopping of 3.1 eV and interlayer hopping of 0.22 eV, including a self-consistent Hartree treatment of screening; Hall conductivity was modeled for a zigzag-edged ribbon in a magnetic field.
Limitations
- The paper states that the Hartree approach is reliable only when the gap is small compared with the interlayer hopping; for hole doping it underestimates the cyclotron mass while the unscreened model overestimates it, so the true gap lies between these limits and a better screening treatment is needed when the electrostatic energy becomes comparable to the interlayer hopping.
- The paper notes that the comparison with angle-resolved photoemission data works well except in the gap saturation regime at high density.
- Evident from the text: for the transport devices, the gap values are inferred by fitting a tight-binding/Hartree model to magnetotransport rather than measured directly by a spectroscopic probe.
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A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The opening of a gap is clearly seen in the quantum Hall regime.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:boosted· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“which is absent in the unbiased case”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“by comparing the observed behavior with our tightbinding results, we show that the gap can be tuned to values larger than 0.2 eV”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“in the biased device, xx at n 0 exceeded 150 kOhm at 4 K, as compared to 6 kOhm for the unbiased case under the same conditions”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“in a magnetic field, a pronounced plateau at zero Hall conductivity xy 0 is found for the biased bilayer”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“the cyclotron mass, m c , in the bilayer biased by chemical doping is an asymmetric function of carrier density, n”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“We show that the gap can be changed from zero to midinfrared energies by using fields of & 1 V=nm, below the electric breakdown of SiO 2 .”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passes- Rests on an assumption: The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The energy gap is revealed by the appearance of the N 0 plateau at xy 0 [see the curve labeled ''doped'' in Fig. 1(a)].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passes
- It may state two separate claims as one. 10
- The quote only partly states this claim. 2
- Probably not a substantial claim. 1
In the paper
“The N 0 plateau is strikingly absent, so that a double step of 8e 2 =h in height occurs at n 0, indicating a metallic state at the neutrality point [3].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [3] 3. K. S. Novoselov et al., Nature Phys. 2, 177 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
- Not matched
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“In this case two flat bands with energies ÿeV=2 and eV=2 appear, similar to the case of zero magnetic field.The other two zero energy bands become dispersive inside the gap, showing the band-crossing phenomenon.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“In the hole doping region in Fig. 1(b), the Hartree approach underestimates the value of m c whereas the simple unscreened result overestimates it.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Strength:plain· not yet calibratedCausal:correlational· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes? Load-bearing: unclear✓ Based: passesIt may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The emerged plateau was accompanied by a huge peak in longitudinal resistivity xx , indicating an insulating state”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“which provides a clear signature of a gap and allows its estimate”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
In the paper
“we have cross-checked our theory against angle-resolved photoemission spectroscopy (ARPES) data [8] and found excellent agreement.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [8] 8. Theory of the gap opening within the continuum model was previously given by E. McCann, Phys. Rev. B 74, 161403 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
Strength:plain· not yet calibratedCausal:correlational· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes? Load-bearing: unclear✓ Based: passesIt may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Zero potential difference and zero gap are expected at n 2n 0 in both unscreened and screened cases, as seen from Eqs. (1) and ( 2) and the fact that nn; 0 0.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
- The authors state this as an assumption: The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Note that at the zero Hall plateau the current carried around the ribbon loop is zero, I 0, which implies, from the theory view point, a diverging longitudinal resistivity at low T”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“This opens a gap of eV in size.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesThe quote only partly states this claim.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“At this particular density the gap closes and the theoretical value becomes independent of the screening assumptions.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one. The quote only partly states this claim.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“a more accurate treatment of screening is needed when eV becomes of the order of t ? .”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Strength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✗ Load-bearing: fails✓ Based: passesProbably not a substantial claim. The paper’s conclusions may not depend on it.
In the paper
“The coefficient 7:2 10 10 cm ÿ2 =V is determined by the geometry of the resulting capacitor and is in agreement with the values of n 1 found experimentally [1][2][3].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [1][2][3]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
Strength:plain· not yet calibratedCausal:direct· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes? Load-bearing: unclear✓ Based: passesIt may state two separate claims as one.
- Not matched
The authors state this as an assumption.
The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
“Assuming equal charge ÿne=2 in layers 1 and 2 of the bilayer”
The paper relies on this without support.
The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
“Note that the breakdown field for SiO 2 is 1 V=nm (i.e., 300 V for the used oxide thickness)”
The authors state this as an assumption.
The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene.
“The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene .”
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
Each contradiction between two passages listed here was confirmed by an independent check.
Laughlin is cited under the wrong reference number
MinorThe text attributes an argument to Laughlin [14], while the reference list assigns 14 to a note and lists Laughlin at 15.
“As pointed out by Laughlin [14], changing the magnetic flux through the ribbon loop by a flux quantum causes the states to move rigidly towards one edge.”
“14. The unbiased case, in the continuum approximation, was studied in Ref. [5]. 15. R. B. Laughlin, Phys. Rev. B 23, 5632 (1981).”
Citations
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Self-citationControlling the Electronic Structure of Bilayer Graphene
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Hematene: a 2D magnetic material in van der Waals or non-van der Waals heterostructures
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Renormalization group aspects of graphene
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Fujimoto, Y. (2015) · Advances in Condensed Matter Physics · doi:10.1155/2015/571490 · Cited by 30
Yun, J., Zhang, Y., Ren, Y., et al. (2018) · Physical Chemistry Chemical Physics · doi:10.1039/c8cp03533d · Cited by 31
Heteroatom-doped graphene and its application as a counter electrode in dye-sensitized solar cells
Ngidi, N. P. D., Ollengo, M. A., & Nyamori, V. O. (2018) · International Journal of Energy Research · doi:10.1002/er.4326 · Cited by 33
“6 × 10 kg),(94) and its band gap can be varied by using an external perpendicular electrical field.(89,95,96) Similarly, tri‐layer graphene also has a parabolic band; however, the effective mass (m = 9.”
BackgroundA Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures
Ghobadi, N., & Pourfath, M. (2014) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2291788 · Cited by 31
“in graphene include patterning graphene into nanoribbons (GNRs), with ION/IOFF ratios up to 106 for ribbons narrower than 5 nm [4], and the use of bilayer graphene with a transverse electric field [5].”
BackgroundMethodSize- and shape-dependence of the graphene to graphane transformation in the absence of hydrogen
Barnard, A. S., & Snook, I. K. (2010) · Journal of Materials Chemistry · doi:10.1039/c0jm01436b · Cited by 31
Mucha‐Kruczyński, M., Abergel, D., McCann, E., & Fal’ko, V. I. (2009) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/21/34/344206 · Cited by 31
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An extended Hückel theory based atomistic model for graphene nanoelectronics
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“This bandgap opening has been recently observed in a magnetotransport experiment [10].”
BackgroundGate-tunable valley-spin filtering in silicene with magnetic barrier
Wu, X., & Meng, H. (2015) · Journal of Applied Physics · doi:10.1063/1.4921799 · Cited by 30
Dirac cone in two dimensional bilayer graphene by intercalation with V, Nb, and Ta transition metals
Pakhira, S., Lucht, K. P., & Mendoza-Cortés, J. L. (2018) · The Journal of Chemical Physics · doi:10.1063/1.5008996 · Cited by 30
Effect of Coulomb interactions on the physical observables of graphene
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Self-citationAn Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs
Aguirre‐Morales, J., Frégonèse, S., Mukherjee, C., et al. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2487243 · Cited by 30
“For sufficiently high perpendicular electric fields, energy bandgaps of ∼200 meV can be obtained [19], [20].”
BackgroundGraphene-based ambipolar electronics for radio frequency applications
Wang, Z., Zhang, Z., & Peng, L. (2012) · Chinese Science Bulletin · doi:10.1007/s11434-012-5143-x · Cited by 30
Electrically tunable multiple Dirac cones in thin films of the (LaO)2(SbSe2)2 family of materials
Dong, X.-Y., Wang, J.-F., Zhang, R.-X., Duan, W., Zhu, B.-F., Sofo, J. O., & Liu, C. (2015) · Nature Communications · doi:10.1038/ncomms9517 · Cited by 32
Supported and Suspended 2D Material-Based FET Biosensors
Masurkar, N., Varma, S., & Arava, L. M. R. (2020) · Electrochem · doi:10.3390/electrochem1030017 · Cited by 30
Antichiral states in twisted graphene multilayers
Denner, M. M., Lado, J. L., & Zilberberg, O. (2020) · Physical Review Research · doi:10.1103/physrevresearch.2.043190 · Cited by 31
Band-gap engineering in chemically conjugated bilayer graphene:Ab initiocalculations
Duong⧫, D. L., Lee, S. M., Chae, S. H., et al. (2012) · Physical Review B · doi:10.1103/physrevb.85.205413 · Cited by 30
Magnetic field dependence of energy levels in biased bilayer graphene quantum dots
da Costa, D. R., Zarenia, M., Chaves, A., Farias, G. A., & Peeters, F. M. (2016) · Physical review. B./Physical review. B · doi:10.1103/physrevb.93.085401 · Cited by 29
Compressibility of the electron gas in bilayer graphene
Borghi, G., Polini, M., Asgari, R., & MacDonald, A. H. (2010) · Physical Review B · doi:10.1103/physrevb.82.155403 · Cited by 30
Highly Stable and Tunable n-Type Graphene Field-Effect Transistors with Poly(vinyl alcohol) Films
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The influence of interlayer asymmetry on the magnetospectroscopy of bilayer graphene
Mucha‐Kruczyński, M., McCann, E., & Fal’ko, V. I. (2009) · Solid State Communications · doi:10.1016/j.ssc.2009.02.057 · Cited by 30
Perovskite solar cells: Different facets of performance
Eperon, G. E., & Ginger, D. S. (2016) · Nature Energy · doi:10.1038/nenergy.2016.109 · Cited by 30
The effect of sublattice symmetry breaking on the electronic properties of doped graphene
Qaiumzadeh, A., & Asgari, R. (2009) · New Journal of Physics · doi:10.1088/1367-2630/11/9/095023 · Cited by 30
Shayeganfar, F., & Shahsavari, R. (2015) · Carbon · doi:10.1016/j.carbon.2015.12.050 · Cited by 30
Topological insulating phases in monolayer and bilayer graphene: An effective action approach
Cortijo, A., Grushin, A. G., & Vozmediano, M. A. H. (2010) · Physical Review B · doi:10.1103/physrevb.82.195438 · Cited by 30
Controlling electrical and thermoelectric properties of bilayer SiC by bias voltage
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Bhattacharyya, S., & Singh, A. K. (2015) · Carbon · doi:10.1016/j.carbon.2015.12.025 · Cited by 29
Karbalaei, M., Dideban, D., & Heidari, H. (2019) · Results in Physics · doi:10.1016/j.rinp.2019.102806 · Cited by 29
“To open a bandgap in graphene and making it a semiconductor, several techniques are proposed including using bilayer graphene and applying a perpendicular field [15,16], narrowing graphene sheet in one dimension to form graphene nanoribbon [16,17], and applying strain to graphene.”
MethodKarbalaei, M., Dideban, D., & Heidari, H. (2019) · Results in Physics · doi:10.1016/j.rinp.2019.102823 · Cited by 29
Hofstadter butterflies and magnetically induced band-gap quenching in graphene antidot lattices
Pedersen, J. G., & Pedersen, T. G. (2013) · Physical Review B · doi:10.1103/physrevb.87.235404 · Cited by 29
Quantum Hall Response to Time-Dependent Strain Gradients in Graphene
Sela, E., Bloch, Y., von Oppen, F., & Shalom, M. B. (2020) · Physical Review Letters · doi:10.1103/physrevlett.124.026602 · Cited by 29
Silicene transistors— A review
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Gap opening by asymmetric doping in graphene bilayers
Menezes, M. G., Capaz, R. B., & Faria, J. L. B. (2010) · Physical Review B · doi:10.1103/physrevb.82.245414 · Cited by 28
Nonlinear optical response of doped monolayer and bilayer graphene: Length gauge tight-binding model
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Surface plasmon resonance bilayer graphene /Al2O3/GaAs Schottky junction near-infrared photodetector
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Kumar, V., Rajput, K., & Roy, D. R. (2020) · Carbon · doi:10.1016/j.carbon.2020.10.082 · Cited by 29
Twist boundary in graphene: energetics and electric field effect
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Disorder-induced tail states in gapped bilayer graphene
Mkhitaryan, V. V., & Raǐkh, M. É. (2008) · Physical Review B · doi:10.1103/physrevb.78.195409 · Cited by 28
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Numerical Methods for Electromagnetic Modeling of Graphene: A Review
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“To overcome this problem by opening up the band gap, graphene nanoribbon (GNR) [22] and biased bilayer graphene [23] have been proposed and implemented.”
MethodElectrically tunable plasma excitations in AA-stacked multilayer graphene
Lin, M.-F., Chuang, Y.-C., & Wu, J.-Y. (2012) · Physical Review B · doi:10.1103/physrevb.86.125434 · Cited by 28
Gate-induced Dirac cones in multilayer graphenes
Morimoto, T., & Koshino, M. (2013) · Physical Review B · doi:10.1103/physrevb.87.085424 · Cited by 28
Non-Hermitian Moiré Valley Filter
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Stress- and electric-field-induced band gap tuning in hexagonal boron phosphide layers
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Impellizzeri, A., Briddon, P. R., & Ewels, C. P. (2019) · Physical review. B./Physical review. B · doi:10.1103/physrevb.100.115410 · Cited by 28
Conductance anomaly near the Lifshitz transition in strained bilayer graphene
Gradinar, D. A., Schomerus, H., & Fal’ko, V. I. (2012) · Physical Review B · doi:10.1103/physrevb.85.165429 · Cited by 28
Bilayered semiconductor graphene nanostructures with periodically arranged hexagonal holes
Kvashnin, D. G., Vancsó, P., Antipina, L. Y., Márk, G. I., Biró, L. P., Sorokin, P. B., & Chernozatonskii, L. A. (2014) · Nano Research · doi:10.1007/s12274-014-0611-z · Cited by 27
“It is possible to open a gap using electric field effect, [8] but its size is tiny, and cannot be used in semiconductor devices.”
BackgroundValley polarization in biased bilayer graphene using circularly polarized light
Friedlan, A., & Dignam, M. M. (2021) · Physical review. B./Physical review. B · doi:10.1103/physrevb.103.075414 · Cited by 27
Electron-beam engineering of single-walled carbon nanotubes from bilayer graphene
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“[60] Castro EV, Novoselov KS, Morozov SV, Peres NMR, Lopes dos Santos JMB, Nilsson J, et al.”
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Metadata
- Authors
- Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C.
- Affiliations
- Universidade do Porto (PT)
- University of Manchester (GB)
- University of Minho (PT)
- Boston University (US)
- Consejo Superior de Investigaciones Científicas (ES)
- ORCID
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2007-11-20
- Volume
- 99
- Issue
- 21
- Pages
- 216802-216802
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2113467957
- Cited by
- 2,033
- References
- 14
- Citations by year
- 2026: 54 · 2025: 60 · 2024: 62 · 2023: 68 · 2022: 85 · 2021: 101 · 2020: 134 · 2019: 102 · 2018: 95 · 2017: 121 · 2016: 134 · 2015: 130 · 2014: 142 · 2013: 146 · 2012: 145
- FWCI
- 55.56
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Physical Review Letters (publishedVersion)
- PubMed (publishedVersion)
- Research Explorer (The University of Manchester) (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- DIGITAL.CSIC (Spanish National Research Council (CSIC)) (submittedVersion, other-oa)
- arXiv (Cornell University)
- Bulletin of the American Physical Society
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Keywords
- bilayer graphene, electric field effects, band gap tuning, gate bias, Shubnikov-de Haas effect, cyclotron mass, tight-binding model, quantum Hall effect, electron density
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