The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index; none of the 8 sources its claims cite is checked for support yet.
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Open accessAbstract
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.
Overview
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Written from the paper’s full text.
TL;DR
The paper reports that bilayer graphene can be converted into a semiconductor whose band gap is externally tunable by gate bias, with the gap ranging from zero to mid-infrared energies. Magnetotransport measurements and tight-binding modeling show clear gap signatures, including a zero Hall conductivity plateau and an asymmetric cyclotron mass.
Key findings
- In biased bilayer graphene, a plateau at zero Hall conductivity appears at the neutrality point, unlike the pristine case; the longitudinal resistivity at neutrality exceeded 150 kΩ at 4 K for the biased device, compared with 6 kΩ for the unbiased device under the same conditions.
- The cyclotron mass depends asymmetrically on carrier density, and comparison with tight-binding theory yields an interlayer hopping parameter of 0.22 eV and indicates gaps larger than 0.2 eV.
- A small-bias linear fit to the screened theory gives a gap of about 1.2 meV per volt relative to a gate voltage of 25 V, while the theory predicts gap saturation at the interlayer hopping scale.
- The model agrees well with angle-resolved photoemission data, except in the gap saturation regime around densities of about 50 × 10¹² cm⁻².
Methods
- Bilayer graphene devices were prepared by micromechanical cleavage on 300 nm SiO₂ and patterned into Hall bars; carrier density was controlled by a Si backgate and by NH₃ chemical doping, with transport measured by lock-in techniques in fields up to 12 T and temperatures from 4 to 300 K.
- Shubnikov–de Haas oscillations were measured versus temperature and fitted to extract the cyclotron mass as a function of carrier density.
- The data were interpreted with a Bernal-stacked bilayer tight-binding model using in-plane hopping of 3.1 eV and interlayer hopping of 0.22 eV, including a self-consistent Hartree treatment of screening; Hall conductivity was modeled for a zigzag-edged ribbon in a magnetic field.
Limitations
- The paper states that the Hartree approach is reliable only when the gap is small compared with the interlayer hopping; for hole doping it underestimates the cyclotron mass while the unscreened model overestimates it, so the true gap lies between these limits and a better screening treatment is needed when the electrostatic energy becomes comparable to the interlayer hopping.
- The paper notes that the comparison with angle-resolved photoemission data works well except in the gap saturation regime at high density.
- Evident from the text: for the transport devices, the gap values are inferred by fitting a tight-binding/Hartree model to magnetotransport rather than measured directly by a spectroscopic probe.
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A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The opening of a gap is clearly seen in the quantum Hall regime.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:boosted· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“which is absent in the unbiased case”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“by comparing the observed behavior with our tightbinding results, we show that the gap can be tuned to values larger than 0.2 eV”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“in the biased device, xx at n 0 exceeded 150 kOhm at 4 K, as compared to 6 kOhm for the unbiased case under the same conditions”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“in a magnetic field, a pronounced plateau at zero Hall conductivity xy 0 is found for the biased bilayer”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“the cyclotron mass, m c , in the bilayer biased by chemical doping is an asymmetric function of carrier density, n”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“We show that the gap can be changed from zero to midinfrared energies by using fields of & 1 V=nm, below the electric breakdown of SiO 2 .”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passes- Rests on an assumption: The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The linear increase of m c with jnj and the pronounced asymmetry between hole-and electron-doping of the biased bilayer are clearly seen here.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesA result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The energy gap is revealed by the appearance of the N 0 plateau at xy 0 [see the curve labeled ''doped'' in Fig. 1(a)].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passes
- It may state two separate claims as one. 10
- The quote only partly states this claim. 2
- Probably not a substantial claim. 1
In the paper
“The N 0 plateau is strikingly absent, so that a double step of 8e 2 =h in height occurs at n 0, indicating a metallic state at the neutrality point [3].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [3] 3. K. S. Novoselov et al., Nature Phys. 2, 177 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
- Not matched
A result the paper reports from its own data — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“In this case two flat bands with energies ÿeV=2 and eV=2 appear, similar to the case of zero magnetic field.The other two zero energy bands become dispersive inside the gap, showing the band-crossing phenomenon.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
The paper states this without a source or data behind it here, so there is nothing to check it against. The quote shows it is in the paper.
In the paper
“In the hole doping region in Fig. 1(b), the Hartree approach underestimates the value of m c whereas the simple unscreened result overestimates it.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Strength:plain· not yet calibratedCausal:correlational· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes? Load-bearing: unclear✓ Based: passesIt may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“The emerged plateau was accompanied by a huge peak in longitudinal resistivity xx , indicating an insulating state”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“which provides a clear signature of a gap and allows its estimate”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
In the paper
“we have cross-checked our theory against angle-resolved photoemission spectroscopy (ARPES) data [8] and found excellent agreement.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [8] 8. Theory of the gap opening within the continuum model was previously given by E. McCann, Phys. Rev. B 74, 161403 (2006).
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
Strength:plain· not yet calibratedCausal:correlational· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes? Load-bearing: unclear✓ Based: passesIt may state two separate claims as one.
- Not matched
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Zero potential difference and zero gap are expected at n 2n 0 in both unscreened and screened cases, as seen from Eqs. (1) and ( 2) and the fact that nn; 0 0.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Load-bearingStrength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
- The authors state this as an assumption: The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“Note that at the zero Hall plateau the current carried around the ribbon loop is zero, I 0, which implies, from the theory view point, a diverging longitudinal resistivity at low T”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“This opens a gap of eV in size.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesThe quote only partly states this claim.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“At this particular density the gap closes and the theoretical value becomes independent of the screening assumptions.”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Tests✓ Asserted: passes✓ Checkable: passes✓ Load-bearing: passes✓ Based: passesIt may state two separate claims as one. The quote only partly states this claim.
A conclusion the paper draws from its own results — it cites no other source for it, so there is none to check. The quote shows it is in the paper.
In the paper
“a more accurate treatment of screening is needed when eV becomes of the order of t ? .”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
Strength:plain· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes✗ Load-bearing: fails✓ Based: passesProbably not a substantial claim. The paper’s conclusions may not depend on it.
In the paper
“The coefficient 7:2 10 10 cm ÿ2 =V is determined by the geometry of the resulting capacitor and is in agreement with the values of n 1 found experimentally [1][2][3].”
§ Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect > Abstract
What the sources say
- Not matchedcites [1][2][3]
Couldn’t be matched to a paper in Crossref, so it can’t be checked.
Strength:plain· not yet calibratedCausal:direct· not yet calibratedTests✓ Asserted: passes✓ Checkable: passes? Load-bearing: unclear✓ Based: passesIt may state two separate claims as one.
- Not matched
The authors state this as an assumption.
The charge in layers 1 and 2 of the bilayer is equal to -ne/2.
“Assuming equal charge ÿne=2 in layers 1 and 2 of the bilayer”
The paper relies on this without support.
The breakdown field for SiO2 is 1 V/nm (i.e., 300 V for the used oxide thickness).
“Note that the breakdown field for SiO 2 is 1 V=nm (i.e., 300 V for the used oxide thickness)”
The authors state this as an assumption.
The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene.
“The electric field induced between the two layers can be considered as a result of the effect of charged surfaces placed above and below bilayer graphene .”
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
Each contradiction between two passages listed here was confirmed by an independent check.
Laughlin is cited under the wrong reference number
MinorThe text attributes an argument to Laughlin [14], while the reference list assigns 14 to a note and lists Laughlin at 15.
“As pointed out by Laughlin [14], changing the magnetic flux through the ribbon loop by a flux quantum causes the states to move rigidly towards one edge.”
“14. The unbiased case, in the continuum approximation, was studied in Ref. [5]. 15. R. B. Laughlin, Phys. Rev. B 23, 5632 (1981).”
Citations
Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Self-citationGeim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationTwo-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Self-citationExperimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Detection of individual gas molecules adsorbed on graphene
Schedin, F., Geim, A. K., Morozov, S. V., Hill, E. W., Blake, P., Katsnelson, M. I., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1967 · Cited by 8,028
Self-citationControlling the Electronic Structure of Bilayer Graphene
Ohta, T., Bostwick, A., Seyller, T. K., Horn, K., & Rotenberg, E. (2006) · Science · doi:10.1126/science.1130681 · Cited by 3,346
Halperin, B. I. (1982) · Physical Review B · doi:10.1103/physrevb.25.2185 · Cited by 2,547
Quantized Hall conductivity in two dimensions
Laughlin, R. B. (1981) · Physical Review B · doi:10.1103/physrevb.23.5632 · Cited by 2,162
Landau-Level Degeneracy and Quantum Hall Effect in a Graphite Bilayer
McCann, E., & Fal’ko, V. I. (2006) · Physical Review Letters · doi:10.1103/physrevlett.96.086805 · Cited by 2,060
Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
Novoselov, K. S., McCann, E., Morozov, S. V., Fal’ko, V. I., Katsnelson, M. I., Zeitler, U., Jiang, D., Schedin, F., & Geim, A. K. (2006) · Nature Physics · doi:10.1038/nphys245 · Cited by 1,967
Self-citation
Flagged first, then by citations
Cited by
Sorted by citations
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationThe electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
“Fromthe observed harge distribution and self- onsistent al- ulations, an estimate of the band stru ture parameters and their relation with the indu ed gap an be obtained(Castro et al., 2007a).”
BackgroundInfluentialSelf-citationBoron nitride substrates for high-quality graphene electronics
Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,194
Honeycomb Carbon: A Review of Graphene
Allen, M. J., Tung, V., & Kaner, R. B. (2009) · Chemical Reviews · doi:10.1021/cr900070d · Cited by 7,073
Raman spectroscopy in graphene
Malard, L. M., Pimenta, M. A., Dresselhaus, G., & Dresselhaus, M. S. (2009) · Physics Reports · doi:10.1016/j.physrep.2009.02.003 · Cited by 6,168
Schwierz, F. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.89 · Cited by 5,396
Graphene: The New Two‐Dimensional Nanomaterial
Rao, C. N. R., Sood, A. K., Subrahmanyam, K. S., & Govindaraj, A. (2009) · Angewandte Chemie International Edition · doi:10.1002/anie.200901678 · Cited by 3,969
Direct observation of a widely tunable bandgap in bilayer graphene
Zhang, Y., Tang, T., Girit, Ç., Hao, Z., Martin, M. C., Zettl, A. K., Crommie, M. F., Shen, Y. R., & Wang, F. (2009) · Nature · doi:10.1038/nature08105 · Cited by 3,682
Graphene based materials: Past, present and future
Singh, V. V., Joung, D., Zhai, L., Das, S., Khondaker, S. I., & Seal, S. (2011) · Progress in Materials Science · doi:10.1016/j.pmatsci.2011.03.003 · Cited by 3,614
“In another study [190], it was reported that the electronic band gap of the bi-layer graphene can be tuned by applying electric field, which provide an opportunity to use graphene bi-layer as a tunable energy band gap semiconductor for many electronic applications like photodetectors, tera-”
BackgroundGiant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
Morozov, S. V., Novoselov, K. S., Katsnelson, M. I., Schedin, F., Elias, D. C., Jaszczak, J. A., & Geim, A. K. (2008) · Physical Review Letters · doi:10.1103/physrevlett.100.016602 · Cited by 3,506
Self-citationElectronic transport in two-dimensional graphene
Sarma, S. D., Adam, S., Hwang, E. H., & Rossi, E. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.407 · Cited by 3,526
“…external electric field perpendicular to the layers, ẑ-direction) in the electrochemical potential between the two layers, which would translate into an effective bandgap opening near the Dirac point (Castro et al., 2007; Ohta et al., 2006; Oostinga et al., 2008; Zhang et al., 2009c) Expanding Eq.”
BackgroundScience and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Ferrari, A. C., Bonaccorso, F., Fal’ko, V. I., Novoselov, K. S., Roche, S., Bøggild, P., Borini, S., Koppens, F. H. L., Palermo, V., Pugno, N. M., et al. (2014) · Nanoscale · doi:10.1039/c4nr01600a · Cited by 3,065
Self-citationField-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Britnell, L., Gorbachev, R., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., et al. (2012) · Science · doi:10.1126/science.1218461 · Cited by 2,562
Self-citationAvouris, P., Chen, Z., & Perebeinos, V. (2007) · Nature Nanotechnology · doi:10.1038/nnano.2007.300 · Cited by 2,557
Substrate-induced bandgap opening in epitaxial graphene
Zhou, S., Gweon, G.-H., Fedorov, A. V., First, P. N., de Heer, W. A., Lee, D. H., Guinea, F., Neto, A. H. C., & Lanzara, A. (2007) · Nature Materials · doi:10.1038/nmat2003 · Cited by 2,395
Self-citationGate-induced insulating state in bilayer graphene devices
Oostinga, J. B., Heersche, H. B., Liu, X., Morpurgo, A. F., & Vandersypen, L. M. K. (2007) · Nature Materials · doi:10.1038/nmat2082 · Cited by 1,668
Liu, H., Liu, Y., & Zhu, D. (2010) · Journal of Materials Chemistry · doi:10.1039/c0jm02922j · Cited by 1,627
Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening
Ni, Z., Yu, T., Lu, Y., Wang, Y., Feng, Y. P., & Shen, Z. (2008) · ACS Nano · doi:10.1021/nn800459e · Cited by 1,615
“Different attempts have been made by researchers, such as patterning graphene into nanoribbon,(3) forming graphene quantum dots,(2) making use of multilayer graphene sheets and applying an external electrical field.(4) According to the carbon nanotubes (CNTs) study, the strain will dramatically change the electronic s…”
MethodGraphene Bilayer with a Twist: Electronic Structure
dos Santos, J. M. B. L., Peres, N. M. R., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.256802 · Cited by 1,563
Self-citationTunable Bandgap in Silicene and Germanene
Ni, Z., Liu, Q., Tang, K., Zheng, J., Zhou, J., Qin, R., Gao, Z., Yu, D., & Lü, J. (2011) · Nano Letters · doi:10.1021/nl203065e · Cited by 1,452
Carbon Nanomaterials in Biosensors: Should You Use Nanotubes or Graphene?
Yang, W. R., Ratinac, K. R., Ringer, S. P., Thordarson, P., Gooding, J. J., & Braet, F. (2010) · Angewandte Chemie International Edition · doi:10.1002/anie.200903463 · Cited by 1,446
Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2012) · Chemical Society Reviews · doi:10.1039/c2cs35335k · Cited by 1,352
Xia, F., Farmer, D. B., Lin, Y.-M., & Avouris, P. (2010) · Nano Letters · doi:10.1021/nl9039636 · Cited by 1,327
Observation of Van Hove singularities in twisted graphene layers
Li, G., Luican‐Mayer, A., dos Santos, J. M. B. L., Neto, A. H. C., Reina, A., Kong, J., & Andrei, E. Y. (2009) · Nature Physics · doi:10.1038/nphys1463 · Cited by 1,239
Self-citationElectron-Electron Interactions in Graphene: Current Status and Perspectives
Kotov, V. N., Uchoa, B., Pereira, V. M., Guinea, F., & Neto, A. H. C. (2012) · Reviews of Modern Physics · doi:10.1103/revmodphys.84.1067 · Cited by 1,233
Self-citationProbing Symmetry Properties of Few-Layer MoS 2 and h-BN by Optical Second-Harmonic Generation
Li, Y., Rao, Y., Mak, K. F., You, Y., Wang, S., Dean, C. R., & Heinz, T. F. (2013) · Nano Letters · doi:10.1021/nl401561r · Cited by 1,174
Valley-dependent optoelectronics from inversion symmetry breaking
Yao, W., Xiao, D., & Niu, Q. (2008) · Physical Review B · doi:10.1103/physrevb.77.235406 · Cited by 1,161
Properties of graphene: a theoretical perspective
Abergel, D., Apalkov, V., Berashevich, J., Ziegler, K., & Chakraborty, T. (2010) · Advances In Physics · doi:10.1080/00018732.2010.487978 · Cited by 1,219
The electronic properties of bilayer graphene
McCann, E., & Koshino, M. (2013) · Reports on Progress in Physics · doi:10.1088/0034-4885/76/5/056503 · Cited by 1,269
Atomic Structure of Graphene on SiO2
Williams, E. D. (2007) · Cited by 1,145
Exfoliated Graphene Separated by Platinum Nanoparticles
Si, Y., & Samulski, E. T. (2008) · Chemistry of Materials · doi:10.1021/cm801356a · Cited by 1,133
Hot Carrier–Assisted Intrinsic Photoresponse in Graphene
Gabor, N. M., Song, J. C. W., Ma, Q., Nair, N. L., Taychatanapat, T., Watanabe, K., Taniguchi, T., Levitov, L. S., & Jarillo-Herrero, P. (2011) · Science · doi:10.1126/science.1211384 · Cited by 1,076
Colloquium: The transport properties of graphene: An introduction
Peres, N. M. R. (2010) · Reviews of Modern Physics · doi:10.1103/revmodphys.82.2673 · Cited by 1,024
“The main limiting factor of all graphene properties, in what concerns its application to nanoelectronics, is, most likely, the lack of a true band gap, as opposed to the biased graphene bilayer (Castro et al., 2007; McCann, 2006; McCann and Falko, 2006).”
BackgroundSelf-citationGraphene: An Emerging Electronic Material
Weiss, N. O., Zhou, H., Liao, L., Liu, Y., Jiang, S. H., Huang, Y., & Duan, X. (2012) · Advanced Materials · doi:10.1002/adma.201201482 · Cited by 915
Optical conductivity of graphene in the visible region of the spectrum
Stauber, T., Peres, N. M. R., & Geim, A. K. (2008) · Physical Review B · doi:10.1103/physrevb.78.085432 · Cited by 883
Self-citationDai, J., & Zeng, X. C. (2014) · The Journal of Physical Chemistry Letters · doi:10.1021/jz500409m · Cited by 870
Nobel Lecture: Graphene: Materials in the Flatland
Novoselov, K. S. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.837 · Cited by 863
“One could also use bilayer graphene, as a gap can be opened by applying a potential difference between the two layers (Ohta et al., 2006; Castro et al., 2007; Oostinga et al., 2007; Kuzmenko et al., 2009a, 2009b; Zhang et al., 2009; Castro et al., 2010).”
BackgroundInfluentialSelf-citationTwo-dimensional semiconductors with possible high room temperature mobility
Zhang, W., Huang, Z., Zhang, W., & Li, Y. (2014) · Nano Research · doi:10.1007/s12274-014-0532-x · Cited by 841
“It is possible to open a gap at the Dirac cone, but usually the gap is tiny, and required extra parameters, for example, external electric fields [5], which is not easy to fully integrate it with present semiconductor processes.”
BackgroundRao, C. N. R., Biswas, K., Subrahmanyam, K. S., & Govindaraj, A. (2009) · Journal of Materials Chemistry · doi:10.1039/b815239j · Cited by 811
Probing Layer Number and Stacking Order of Few‐Layer Graphene by Raman Spectroscopy
Hao, Y., Wang, Y., Wang, L., Ni, Z., Wang, Z., Wang, R., Koo, C. K., Shen, Z., & Thong, J. T. L. (2009) · Small · doi:10.1002/smll.200901173 · Cited by 798
Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties
Usachov, D. Y., Vilkov, O. Y., Grüneis, A., Haberer, D., Fedorov, A., Константиновна, А. В., Preobrajenski, A., Dudin, P., Barinov, A., Oehzelt, M., et al. (2011) · Nano Letters · doi:10.1021/nl2031037 · Cited by 766
Structure of graphene and its disorders: a review
Gao, Y., Li, L., Lee, W. B., & Ng, M. C. (2018) · Science and Technology of Advanced Materials · doi:10.1080/14686996.2018.1494493 · Cited by 812
“The band structure of bilayer graphene can be tuned by applying an electric field [114,115], providing appropriate substrates [116] or chemical modulations [117,118], which is expected to attract interests”
BackgroundBlack Phosphorus: Narrow Gap, Wide Applications
Castellanos-Gómez, A. (2015) · The Journal of Physical Chemistry Letters · doi:10.1021/acs.jpclett.5b01686 · Cited by 755
Graphene, hexagonal boron nitride, and their heterostructures: properties and applications
Wang, J., Ma, F., & Sun, M. (2017) · RSC Advances · doi:10.1039/c7ra00260b · Cited by 749
Two-dimensional materials and their prospects in transistor electronics
Schwierz, F., Pezoldt, J., & Granzner, R. (2015) · Nanoscale · doi:10.1039/c5nr01052g · Cited by 731
The shear mode of multilayer graphene
Tan, P., Han, W. P., Zhao, W., Wu, Z., Chang, K., Wang, H., Wang, Y. F., Bonini, N., Marzari, N., Pugno, N. M., et al. (2012) · Nature Materials · doi:10.1038/nmat3245 · Cited by 716
“[3] Castro, E.”
BackgroundAtomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene
Yoo, H., Engelke, R., Carr, S., Fang, S., Zhang, K., Cazeaux, P., Sung, S. H., Hovden, R., Tsen, A. W., Taniguchi, T., et al. (2019) · Nature Materials · doi:10.1038/s41563-019-0346-z · Cited by 719
Gas sensors using carbon nanomaterials: A review
Llobet, E. (2012) · Sensors and Actuators B Chemical · doi:10.1016/j.snb.2012.11.014 · Cited by 711
Topological valley transport at bilayer graphene domain walls
Ju, L., Shi, Z., Nair, N., Lv, Y., Jin, C., Velasco, J., Ojeda-Aristizabal, C., Bechtel, H. A., Martin, M. C., Zettl, A., et al. (2015) · Nature · doi:10.1038/nature14364 · Cited by 680
Graphene-related nanomaterials: tuning properties by functionalization
Tang, Q. H., Zhou, Z. P., & Chen, Z. (2013) · Nanoscale · doi:10.1039/c3nr33218g · Cited by 669
Electronic and Magnetic Properties of Quasifreestanding Graphene on Ni
Varykhalov, A., Sánchez‐Barriga, J., Shikin, A. M., Biswas, C., Vescovo, E., Rybkin, A. G., Marchenko, D. E., & Rader, O. (2008) · Physical Review Letters · doi:10.1103/physrevlett.101.157601 · Cited by 670
Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
Mak, K. F., Lui, C. H., Shan, J., & Heinz, T. F. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.256405 · Cited by 644
Open and Closed Edges of Graphene Layers
Liu, Z., Suenaga, K., Harris, P. J. F., & Iijima, S. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.015501 · Cited by 620
Zhang, A., & Lieber, C. M. (2015) · Chemical Reviews · doi:10.1021/acs.chemrev.5b00608 · Cited by 642
Continuum model of the twisted graphene bilayer
dos Santos, J. M. B. L., Peres, N. M. R., & Neto, A. H. C. (2012) · Physical Review B · doi:10.1103/physrevb.86.155449 · Cited by 621
Self-citationThe electronic properties of bilayer graphene
McCann, E., & Koshino, M. (2013) · Lancaster EPrints (Lancaster University) · Cited by 595
Observation of an electrically tunable band gap in trilayer graphene
Lui, C. H., Li, Z., Mak, K. F., et al. (2011) · Nature Physics · doi:10.1038/nphys2102 · Cited by 596
Kim, K., Coh, S., Tan, L. Z., Regan, W., Yuk, J. M., Chatterjee, E., Crommie, M. F., Cohen, M. L., Louie, S. G., & Zettl, A. K. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.246103 · Cited by 586
Graphene and Graphene-like Two-Dimensional Materials in Photodetection: Mechanisms and Methodology
Sun, Z., & Chang, H. (2014) · ACS Nano · doi:10.1021/nn500508c · Cited by 586
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 576
Fabrication, Mechanical Properties, and Biocompatibility of Graphene-Reinforced Chitosan Composites
Fan, H., Wang, L., Zhao, K., Li, N., Shi, Z., Ge, Z., & Jin, Z. (2010) · Biomacromolecules · doi:10.1021/bm100470q · Cited by 558
Kumar, A., Sharma, K., & Dixit, A. R. (2018) · Journal of Materials Science · doi:10.1007/s10853-018-03244-3 · Cited by 552
Correlated states in twisted double bilayer graphene
Shen, C., Chu, Y., Wu, Q., Li, N., Wang, S., Zhao, Y., Tang, J., Liu, J., Tian, J., Watanabe, K., et al. (2020) · Nature Physics · doi:10.1038/s41567-020-0825-9 · Cited by 540
Riedl, C., Coletti, C., & Starke, U. (2010) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/43/37/374009 · Cited by 541
Strain engineering in semiconducting two-dimensional crystals
Roldán, R., Castellanos-Gómez, A., Cappelluti, E., & Guinea, F. (2015) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/27/31/313201 · Cited by 608
Self-citationGraphene Transistors: Status, Prospects, and Problems
Schwierz, F. (2013) · Proceedings of the IEEE · doi:10.1109/jproc.2013.2257633 · Cited by 513
“Moreover, bandstructure calculations for GNRs and bilayer graphene reveal a high degree of symmetry of the conduction and valence bands pointing to similar effective electron and hole masses [51], [59].”
BackgroundPhosphorene and Phosphorene‐Based Materials – Prospects for Future Applications
Batmunkh, M., Bat‐Erdene, M., & Shapter, J. G. (2016) · Advanced Materials · doi:10.1002/adma.201602254 · Cited by 499
Colloquium : Spintronics in graphene and other two-dimensional materials
Avşar, A., Ochoa, H., Guinea, F., Özyilmaz, B., van Wees, B. J., & Vera-Marun, I. J. (2020) · Reviews of Modern Physics · doi:10.1103/revmodphys.92.021003 · Cited by 474
“This degeneracy is protected by the D3d point group symmetry of the crystal but it can be removed by applying a perpendicular electric field (Castro et al., 2007).”
BackgroundSelf-citationCommensuration and interlayer coherence in twisted bilayer graphene
Melé, E. J. (2010) · Physical Review B · doi:10.1103/physrevb.81.161405 · Cited by 488
Zhu, W., Perebeinos, V., Freitag, M., et al. (2009) · Physical Review B · doi:10.1103/physrevb.80.235402 · Cited by 485
“ture increases, we find that the mobility decreases for mono-layer graphene due to the surface polar substrate scattering as in ref. [11], while it increases almost linearly with temperature (see Eq. (6)) for bilayer/tri-layer graphene. This is attributed to the fact that Coulomb scattering decreases with temperature…”
BackgroundInfluentialTrilayer graphene is a semimetal with a gate-tunable band overlap
Craciun, M. F., Russo, S., Yamamoto, M., Oostinga, J. B., Morpurgo, A. F., & Tarucha, S. (2009) · Nature Nanotechnology · doi:10.1038/nnano.2009.89 · Cited by 457
Electronic properties of graphene-based bilayer systems
Rozhkov, A. V., Sboychakov, A. O., Rakhmanov, A. L., & Nori, F. (2016) · Physics Reports · doi:10.1016/j.physrep.2016.07.003 · Cited by 459
“Experiments confirmed the existence of this gap [46, 51, 54, 57, 58, 59, 60].”
BackgroundResultInfluentialWafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
Lee, S., Lee, K., & Zhong, Z. (2010) · Nano Letters · doi:10.1021/nl1029978 · Cited by 442
Nobel Lecture: Random walk to graphene
Geim, A. K. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.851 · Cited by 438
Self-citationFormation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition
Yan, K., Peng, H., Zhou, Y. R., et al. (2011) · Nano Letters · doi:10.1021/nl104000b · Cited by 421
Band structure of A B C -stacked graphene trilayers
Zhang, F., Sahu, B. R., Min, H., & MacDonald, A. H. (2010) · Physical Review B · doi:10.1103/physrevb.82.035409 · Cited by 425
Valley Chern numbers and boundary modes in gapped bilayer graphene
Zhang, F., MacDonald, A. H., & Melé, E. J. (2013) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1308853110 · Cited by 407
“∓ ffiffiffiffiffiffiffiffi 1∓ξ q eið1−μÞνφ 1 CCCCCCCA ; [5] + V”
Broken-Symmetry States in Doubly Gated Suspended Bilayer Graphene
Weitz, R. T., Allen, M., Feldman, B. E., Martin, J., & Yacoby, A. (2010) · Science · doi:10.1126/science.1194988 · Cited by 412
High frequency electric field induced nonlinear effects in graphene
Глазов, М. М., & Ganichev, S. D. (2013) · Physics Reports · doi:10.1016/j.physrep.2013.10.003 · Cited by 433
Two-dimensional heterostructures: fabrication, characterization, and application
Wang, H., Liu, F., Fu, W., Fang, Z., Zhou, W., & Liu, Z. (2014) · Nanoscale · doi:10.1039/c4nr03435j · Cited by 404
Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices
Lin, Y.-M., & Avouris, P. (2008) · Nano Letters · doi:10.1021/nl080241l · Cited by 399
High frequency electric field induced nonlinear effects in graphene
Глазов, М. М., & Ganichev, S. (2014) · University of Regensburg Publication Server (University of Regensburg) · Cited by 412
Fang, X., Yu, X.-X., Zheng, H., Jin, H., Wang, L., & Cao, M. (2015) · Physics Letters A · doi:10.1016/j.physleta.2015.06.063 · Cited by 377
Spin–layer locking effects in optical orientation of exciton spin in bilayer WSe2
Jones, A. M., Yu, H., Ross, J., Klement, P., Ghimire, N., Yan, J., Mandrus, D. G., Yao, W., & Xu, X. (2014) · Nature Physics · doi:10.1038/nphys2848 · Cited by 361
Efficient electrical control of thin-film black phosphorus bandgap
Deng, B., Tran, V., Xie, Y., Jiang, H., Li, C., Guo, Q., Wang, X., Tian, H., Koester, S. J., Wang, H., et al. (2017) · Nature Communications · doi:10.1038/ncomms14474 · Cited by 350
Engineering symmetry breaking in 2D layered materials
Du, L., Hasan, T., Castellanos-Gómez, A., Liu, G.-B., Yao, Y., Lau, C. N., & Sun, Z. (2021) · Nature Reviews Physics · doi:10.1038/s42254-020-00276-0 · Cited by 381
Liu, Q., Li, L., Li, Y., Gao, Z., Chen, Z., & Lü, J. (2012) · The Journal of Physical Chemistry C · doi:10.1021/jp307124d · Cited by 339
Rozhkov, A. V., Giavaras, G., Bliokh, Y. P., Freilikher, V., & Nori, F. (2011) · Physics Reports · doi:10.1016/j.physrep.2011.02.002 · Cited by 362
“Nanoribbons (width ∼15 nm) [19] 200 BN-h/Cu(111) substrate [27] 53/11 SiC substrate [28] 260 External square superlattice [29] 65 Strain engineering [22] 300 Adsorption of molecules [30] 2 × 103 Graphene covered by H2O/NH3 [24] 18/11 30/42 Nanoribbons (width ∼30 nm) [31] 50 Electrical gates [26] 250 Selective doping (…”
BackgroundSynthesis, Assembly, and Applications of Hybrid Nanostructures for Biosensing
Zhang, S., Geryak, R. D., Geldmeier, J. A., Kim, S., & Tsukruk, V. V. (2017) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00088 · Cited by 341
Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides
Bhattacharyya, S., & Singh, A. K. (2012) · Physical Review B · doi:10.1103/physrevb.86.075454 · Cited by 330
Angle-Resolved Raman Imaging of Interlayer Rotations and Interactions in Twisted Bilayer Graphene
Havener, R. W., Zhuang, H. L., Brown, L., Hennig, R. G., & Park, J. (2012) · Nano Letters · doi:10.1021/nl301137k · Cited by 335
Kuzmenko, A. B., Crassee, I., van der Marel, D., Blake, P., & Novoselov, K. S. (2009) · Physical Review B · doi:10.1103/physrevb.80.165406 · Cited by 337
Self-citationField-effect transistors based on two-dimensional materials for logic applications
Wang, X., Shi, Y., & Zhang, R. (2013) · Chinese Physics B · doi:10.1088/1674-1056/22/9/098505 · Cited by 327
Broken-symmetry states and divergent resistance in suspended bilayer graphene
Feldman, B. E., Martin, J., & Yacoby, A. (2009) · Nature Physics · doi:10.1038/nphys1406 · Cited by 325
Tuneable electronic properties in graphene
Craciun, M. F., Russo, S., Yamamoto, M., & Tarucha, S. (2011) · Nano Today · doi:10.1016/j.nantod.2010.12.001 · Cited by 323
Electronic properties of bilayer and multilayer graphene
Nilsson, J., Neto, A. H. C., Guinea, F., & Peres, N. M. R. (2008) · Physical Review B · doi:10.1103/physrevb.78.045405 · Cited by 313
Self-citationMak, K. F., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.104.176404 · Cited by 314
Tunable Stress and Controlled Thickness Modification in Graphene by Annealing
Ni, Z. H., Wang, H. M., Ma, Y., Kasim, J., Wu, Y. H., & Shen, Z. X. (2008) · ACS Nano · doi:10.1021/nn800031m · Cited by 341
“Researchers have successfully developed an energy gap in graphene by patterning it into nanoribbon,(5) forming quantum dots 4 or making use of mutilayer graphene sheets with or without the application of an external electrical field.(6,7) Besides global back gates,(8,9) top local gates(10-12) have also been employed t…”
MethodKim, K., Lee, Z., Malone, B. D., Chan, K. T., Alemán, B., Regan, W., Gannett, W., Crommie, M. F., Cohen, M. L., & Zettl, A. K. (2011) · Physical Review B · doi:10.1103/physrevb.83.245433 · Cited by 315
Determination of the electronic structure of bilayer graphene from infrared spectroscopy
Zhang, L. M., Li, Z. Q., Basov, D. N., Fogler, M. M., Hao, Z., & Martin, M. C. (2008) · Physical Review B · doi:10.1103/physrevb.78.235408 · Cited by 311
Metadata
- Authors
- Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C.
- Affiliations
- Universidade do Porto (PT)
- University of Manchester (GB)
- University of Minho (PT)
- Boston University (US)
- Consejo Superior de Investigaciones Científicas (ES)
- ORCID
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2007-11-20
- Volume
- 99
- Issue
- 21
- Pages
- 216802-216802
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2113467957
- Cited by
- 2,033
- References
- 14
- Citations by year
- 2026: 54 · 2025: 60 · 2024: 62 · 2023: 68 · 2022: 85 · 2021: 101 · 2020: 134 · 2019: 102 · 2018: 95 · 2017: 121 · 2016: 134 · 2015: 130 · 2014: 142 · 2013: 146 · 2012: 145
- FWCI
- 55.56
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Physical Review Letters (publishedVersion)
- PubMed (publishedVersion)
- Research Explorer (The University of Manchester) (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- DIGITAL.CSIC (Spanish National Research Council (CSIC)) (submittedVersion, other-oa)
- arXiv (Cornell University)
- Bulletin of the American Physical Society
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Keywords
- bilayer graphene, electric field effects, band gap tuning, gate bias, Shubnikov-de Haas effect, cyclotron mass, tight-binding model, quantum Hall effect, electron density
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