The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
A new recombination model for device simulation including tunneling
Abstract
A recombination model for device simulation that includes both trap-assisted tunneling (under forward and reverse bias) and band-to-band tunneling (Zener tunneling) is presented. The model is formulated in terms of analytical functions of local variables, which makes it easy to implement in a numerical device simulator. The trap-assisted tunneling effect is described by an expression that for weak electric fields reduces to the conventional Shockley-Read-Hall (SRH) expression for recombination via traps. Compared to the conventional SRH expression, the model has one extra physical parameter, the effective mass m*. For m*=0.25 m/sub 0/ the model correctly describes the experimental observations associated with tunneling. The band-to-band tunneling contribution is found to be important at room temperature for electric fields larger than 7*10/sup 5/ V/cm. For dopant concentrations above 5*10/sup 17/ cm/sup -3/ or, equivalently, for breakdown voltages below approximately 5 V, the reverse characteristics are dominated by band-to-band tunneling.>
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Cites
Handbook of Mathematical Functions.
Florentin, J. J., Abramowitz, M., & Stegun, I. A. (1966) · The American Mathematical Monthly · doi:10.2307/2314682 · Cited by 7,560
Schiff, L. I. (1949) · Cited by 3,018
The physics of semiconductor devices
Grubin, H. (1979) · IEEE Journal of Quantum Electronics · doi:10.1109/jqe.1979.1069942 · Cited by 2,753
Zener tunneling in semiconductors
Kane, E. O. (1960) · Journal of Physics and Chemistry of Solids · doi:10.1016/0022-3697(60)90035-4 · Cited by 955
Deep impurities in semiconductors
Milnes, A. G. (1973) · International Linear Collider · Cited by 845
Deep impurities in semiconductors
Llacer, J. (1974) · Journal of Crystal Growth · doi:10.1016/0022-0248(74)90030-x · Cited by 785
Electric field effect on the thermal emission of traps in semiconductor junctions
Vincent, G., Chantre, A., & Bois, D. (1979) · Journal of Applied Physics · doi:10.1063/1.326601 · Cited by 535
Behavior of non-metallic crystals in strong electric fields
Keldysh, L. V. (2023) · WORLD SCIENTIFIC eBooks · doi:10.1142/9789811279461_0002 · Cited by 113
Cited by
Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs
Sajjad, R. N., Chern, W., Hoyt, J. L., & Antoniadis, D. A. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2603468 · Cited by 141
Metadata
- Authors
- Hurkx, G. A. M., Klaassen, D. B. M., & Knuvers, M. P. G.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1992
- Volume
- 39
- Issue
- 2
- Pages
- 331-338
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2144970115
- Cited by
- 938
- References
- 8
- FWCI
- 10.26
- Type
- journal article
- Language
- en
- Open access
- closed
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- Hurkx, G. A. M., Klaassen, D. B. M., & Knuvers, M. P. G. (1992). A new recombination model for device simulation including tunneling. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.121690
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
