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On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices

Lacaita, A.L., Zappa, F., Bigliardi, S., Manfredi, M.·1993·IEEE Transactions on Electron Devices

Abstract

Spectrally resolved absolute measurements of hot-carrier-induced photon emission in silicon are reported. In order to avoid uncertainties in geometrical and physical parameters, the simplest conceivable device, an avalanching p-n junction, was used. A photon emission efficiency of 2.9*10/sup 5/ photons with energy higher than 1.14 eV per carrier crossing the junction, independent of the lattice temperature down to 20 K, was measured. On the basis of these results the bremsstrahlung origin of the hot-carrier-induced light emission is critically reviewed.>

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Metadata

Authors
Lacaita, A. L., Zappa, F., Bigliardi, S., & Manfredi, M.
Venue
IEEE Transactions on Electron Devices
Published
1993-03
Volume
40
Issue
3
Pages
577-582
ISSN
0018-9383 (ISSN-L)
OpenAlex
W2158497911
Cited by
288
References
0
FWCI
5.43
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices. https://app.cochat.ai/papers/10.1109/16.199363
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Lacaita, A. L., Zappa, F., Bigliardi, S., & Manfredi, M. (1993). On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.199363

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