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Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
Abstract
This paper presents a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices. Seven different figures of merit have been analyzed. Theoretical calculations show that besides diamond and SiC, compounds like AlN, GaN, InN, and ZnO, and the intermetallics (Ga/sub x/In/sub 1-x/N, Al/sub x/In/sub 1-x/N, Al/sub x/Ga/sub 1-x/N, and (AlN)/sub x/(SiC)/sub 1-x/) offer several orders of magnitude improvement in the on-resistance and in the potential for successful operation at higher temperatures.>
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Citations
Cited by
Silicon carbide benefits and advantages for power electronics circuits and systems
Elasser, A., & Chow, T. P. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021562 · Cited by 537
Self-citationDie Attach Materials for High Temperature Applications: A Review
Manikam, V. R., & Cheong, K. Y. (2011) · IEEE Transactions on Components, Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2010.2100432 · Cited by 478
Metadata
- Authors
- Chow, T. P., & Tyagi, R.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1994
- Volume
- 41
- Issue
- 8
- Pages
- 1481-1483
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2114902077
- Cited by
- 487
- References
- 0
- FWCI
- 4.32
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chow, T. P., & Tyagi, R. (1994). Wide bandgap compound semiconductors for superior high-voltage unipolar power devices. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.297751
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.