The DOI matches its Crossref record.
Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures
Abstract
Flicker noise is the dominant noise source in silicon MOSFET's. Even though considerable amount of work has been done in investigating the noise mechanism, controversy still exists as to the noise origin. In this paper, a systematic study of flicker noise in CMOS transistors from twelve different fabricators is reported under various bias conditions corresponding to the gate voltage changing from subthreshold to strong inversion, and the drain voltage changing from linear to saturation regions of operation. The measurement temperature was varied from room temperature down to 5 K. Experimental results consistently suggest that 1/f noise in n-channel devices is dominated by carrier-density fluctuation while in p-channel devices the noise is mainly due to mobility fluctuation.>
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
Phase Noise and Jitter in CMOS Ring Oscillators
Abidi, A. A. (2006) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.2006.876206 · Cited by 740
Self-citationMeasurement of noise characteristics of MEMS accelerometers
Mohd-Yasin, F., Korman, C. E., & Nagel, D. J. (2003) · Solid-State Electronics · doi:10.1016/s0038-1101(02)00220-4 · Cited by 46
Metadata
- Authors
- Chang, J., Abidi, A. A., & Viswanathan, C. R.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1994
- Volume
- 41
- Issue
- 11
- Pages
- 1965-1971
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2126159071
- Cited by
- 302
- References
- 0
- FWCI
- 5.86
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures. https://app.cochat.ai/papers/10.1109/16.333812
- The paper
- Chang, J., Abidi, A. A., & Viswanathan, C. R. (1994). Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.333812
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
