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On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
Abstract
This paper reports the studies of the inversion layer mobility in n- and p-channel Si MOSFET's with a wide range of substrate impurity concentrations (10/sup 15/ to 10/sup 18/ cm/sup -3/). The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (E/sub eff/) are examined. It is found that the universality of both the electron and hole mobilities does hold up to 10/sup 18/ cm/sup -3/. The E/sub eff/ dependences of the universal curves are observed to differ between electrons and holes, particularly at lower temperatures. This result means a different influence of surface roughness scattering on the electron and hole transports. On substrates with higher impurity concentrations, the electron and hole mobilities significantly deviate from the universal curves at lower surface carrier concentrations because of Coulomb scattering by the substrate impurity. Also, the deviation caused by the charged centers at the Si/SiO/sub 2/ interface is observed in the mobility of MOSFET's degraded by Fowler-Nordheim electron injection.>
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Cites
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Cited by
Fischetti, M. V., Ren, Z., Solomon, P. M., Yang, M., & Rim, K. (2003) · Journal of Applied Physics · doi:10.1063/1.1585120 · Cited by 485
2D V‐V Binary Materials: Status and Challenges
Guo, S., Zhang, Y., Ge, Y., Zhang, S., Zeng, H., & Zhang, H. (2019) · Advanced Materials · doi:10.1002/adma.201902352 · Cited by 363
Poncé, S., Li, W., Reichardt, S., & Giustino, F. (2020) · Reports on Progress in Physics · doi:10.1088/1361-6633/ab6a43 · Cited by 357
Hong, J., Jin, C., Yuan, J., & Zhang, Z. (2017) · Advanced Materials · doi:10.1002/adma.201606434 · Cited by 293
Metadata
- Authors
- Takagi, S., Toriumi, A., Iwase, M., & Tango, H.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1994
- Volume
- 41
- Issue
- 12
- Pages
- 2357-2362
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2139424966
- Cited by
- 1,492
- References
- 1
- FWCI
- 10.74
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration. https://app.cochat.ai/papers/10.1109/16.337449
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- Takagi, S., Toriumi, A., Iwase, M., & Tango, H. (1994). On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.337449
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