The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Negative capacitance effect in semiconductor devices
Open accessAbstract
Nontrivial capacitance behavior, including a negative capacitance (NC) effect, observed in a variety of semiconductor devices, is discussed emphasizing the physical mechanism and the theoretical interpretation of experimental data. The correct interpretation of NC can be based on the analysis of the time-domain transient current in response to a small voltage step or impulse, involving a self-consistent treatment of all relevant physical effects (carrier transport, injection, recharging, etc.). NC appears in the case of the nonmonotonic or positive-valued behavior of the time-derivative of the transient current in response to a small voltage step. The time-domain transient current approach is illustrated by simulation results and experimental studies of quantum well infrared photodetectors (QWIPs). The NC effect in QWIPs has been predicted theoretically and confirmed experimentally. The huge NC phenomenon in QWIP's is due to the nonequilibrium transient injection from the emitter caused by the properties of the injection barrier and the inertia of the QW recharging.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Quantum-well infrared photodetectors
Levine, B. F. (1993) · Journal of Applied Physics · doi:10.1063/1.354252 · Cited by 1,663
Low Frequency Admittance of a Quantum Point Contact
Christen, T., & Büttiker, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.143 · Cited by 191
Cited by
Guerrero, A., Bisquert, J., & Garcia-Belmonte, G. (2021) · Chemical Reviews · doi:10.1021/acs.chemrev.1c00214 · Cited by 339
Solid-state memcapacitive system with negative and diverging capacitance
Martinez-Rincon, J., Di Ventra, M., & Pershin, Y. V. (2010) · Physical Review B · doi:10.1103/physrevb.81.195430 · Cited by 99
Metadata
- Authors
- Ershov, M., Liu, H. C., Li, L., Buchanan, M., Wasilewski, Z. R., & Jonscher, A. K.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1998
- Volume
- 45
- Issue
- 10
- Pages
- 2196-2206
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2151234380
- Cited by
- 300
- References
- 2
- FWCI
- 5.84
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Negative capacitance effect in semiconductor devices. https://app.cochat.ai/papers/10.1109/16.725254
- The paper
- Ershov, M., Liu, H. C., Li, L., Buchanan, M., Wasilewski, Z. R., & Jonscher, A. K. (1998). Negative capacitance effect in semiconductor devices. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.725254
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
