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Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
Abstract
The development of GaN based devices for microwave power electronics at the University of California, Santa Barbara (UCSB), is reviewed. From 1995 to 2000, the power performance of AlGaN/GaN-on-sapphire heterojunction field effect transistors improved from 1.1 W/mm to 6.6 W/mm, respectively. Compensating the disadvantages of the low thermal conductivity of the sapphire substrate through heat management via flip chip bonding onto AlN substrates, large periphery devices with an output power of 7.6 W were demonstrated. UCSB also fabricated the first GaN based amplifier integrated circuits. Critical issues involved in the growth of high quality AlGaN/GaN heterostructures by metal-organic chemical vapor deposition and the device fabrication are discussed.
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Cited by
AlGaN/GaN HEMTs—An Overview of Device Operation and Applications
Mishra, U. K., Parikh, P., & Wu, Y.-F. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021567 · Cited by 2,312
Self-citationThe impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
Vetury, R., Zhang, N. Q., Keller, S., & Mishra, U. K. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906451 · Cited by 1,453
Self-citationKhaligh, A., & Dusmez, S. (2012) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2012.2213104 · Cited by 630
Metadata
- Authors
- Keller, S., Wu, Y.-F., Parish, G., Ziang, N., Xu, J. J., Keller, B. P., DenBaars, S. P., & Mishra, U. K.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2001-03
- Volume
- 48
- Issue
- 3
- Pages
- 552-559
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2163458830
- Cited by
- 200
- References
- 0
- FWCI
- 9.00
- Type
- journal article
- Language
- en
- Open access
- closed
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- Keller, S., Wu, Y.-F., Parish, G., Ziang, N., Xu, J. J., Keller, B. P., DenBaars, S. P., & Mishra, U. K. (2001). Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB. IEEE Transactions on Electron Devices. https://doi.org/10.1109/16.906450
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