The DOI matches its Crossref record; 27 of the 29 references it cites were found in a registry or an index.
Essential physics of carrier transport in nanoscale MOSFETs
Abstract
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model.
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“This study does not take into account the ballistic transport and quantum mechanical effects (QMEs), which become dominant only when the channel length and thickness are less than 10 nm, respectively [34,44].”
From Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET (2023) · cites this paper as [44]
Citations
Cites
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Self-citation
Flagged first, then by citations
2 of the 29 references couldn’t be matched to a known paper.
Research works printed but not linked: 8
- Javanovic, 7th Int. Worklshop Computational Electronics
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- Rahman, Toward a compact scattering model for nanoscale MOSFETs
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Cited by
Sorted by citations
Energy dissipation and transport in nanoscale devices
Pop, E. (2010) · Nano Research · doi:10.1007/s12274-010-1019-z · Cited by 1,308
Theory of ballistic nanotransistors
Rahman, A., Guo, J., Datta, S., & Lundstrom, M. (2003) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2003.815366 · Cited by 769
Self-citationHeat Generation and Transport in Nanometer-Scale Transistors
Pop, E., Sinha, S., & Goodson, K. E. (2006) · Proceedings of the IEEE · doi:10.1109/jproc.2006.879794 · Cited by 712
Nanowire Electronics: From Nanoscale to Macroscale
Jia, C., Lin, Z., Huang, Y., & Duan, X. (2019) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00164 · Cited by 376
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
Takagi, S., Iisawa, T., Tezuka, T., Numata, T., Nakaharai, S., Hirashita, N., Moriyama, Y., Usuda, K., Toyoda, E., Dissanayake, S., et al. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.911034 · Cited by 343
Metadata
- Authors
- Lundstrom, M., & Ren, Z.
- Affiliations
- Purdue University West Lafayette (US)
- ORCID
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2002
- Volume
- 49
- Issue
- 1
- Pages
- 133-141
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2109617856
- Cited by
- 554
- References
- 29
- Citations by year
- 2026: 8 · 2025: 5 · 2024: 8 · 2023: 8 · 2022: 12 · 2021: 17 · 2020: 16 · 2019: 12 · 2018: 18 · 2017: 22 · 2016: 18 · 2015: 29 · 2014: 19 · 2013: 29 · 2012: 24
- FWCI
- 36.75
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Electron Devices (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Keywords
- nanoscale MOSFETs, carrier transport, charge control, velocity saturation, thermal injection, scattering model, device physics
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