The DOI matches its Crossref record; 27 of the 29 references it cites were found in a registry or an index.
Essential physics of carrier transport in nanoscale MOSFETs
Abstract
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model.
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“This study does not take into account the ballistic transport and quantum mechanical effects (QMEs), which become dominant only when the channel length and thickness are less than 10 nm, respectively [34,44].”
From Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET (2023) · cites this paper as [44]
Citations
Cites
Electronic Transport in Mesoscopic Systems
Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704
Fundamentals of Modern VLSI Devices
Taur, Y., & Ning, T. H. (2009) · Cambridge University Press eBooks · doi:10.1017/cbo9781139195065 · Cited by 2,933
Fundamentals of Carrier Transport
Lundstrom, M. (2000) · Cambridge University Press eBooks · doi:10.1017/cbo9780511618611 · Cited by 1,623
Self-citationNanoscale device modeling: the Green’s function method
Datta, S. (2000) · Superlattices and Microstructures · doi:10.1006/spmi.2000.0920 · Cited by 1,219
Ballistic metal-oxide-semiconductor field effect transistor
Natori, K. (1994) · Journal of Applied Physics · doi:10.1063/1.357263 · Cited by 620
Elementary scattering theory of the Si MOSFET
Lundstrom, M. (1997) · IEEE Electron Device Letters · doi:10.1109/55.596937 · Cited by 598
Self-citationOn the performance limits for Si MOSFETs: a theoretical study
Assad, F., Ren, Z., Vasileska, D., Datta, S., & Lundstrom, M. (2000) · IEEE Transactions on Electron Devices · doi:10.1109/16.817590 · Cited by 231
Self-citationA compact scattering model for the nanoscale double-gate MOSFET
Rahman, A., & Lundstrom, M. (2002) · IEEE Transactions on Electron Devices · doi:10.1109/16.987120 · Cited by 192
Self-citationA comparison of semiconductor devices for high-speed logic
Solomon, P. M. (1982) · Proceedings of the IEEE · doi:10.1109/proc.1982.12333 · Cited by 191
Alternative Approach to the Solution of Added Carrier Transport Problems in Semiconductors
McKelvey, J. P., Longini, R. L., & Brody, T. P. (1961) · Physical Review · doi:10.1103/physrev.123.51 · Cited by 142
Flagged first, then by citations
2 of the 29 references couldn’t be matched to a known paper.
Research works printed but not linked: 8
- Javanovic, 7th Int. Worklshop Computational Electronics
- Johnson, 1973, The insulated-gate field-effect transistor—A bipolar transistor in disguise, RCA Rev., 34, 80
- Rahman, Toward a compact scattering model for nanoscale MOSFETs
- Assad, 1999, Performance limits of Si MOSFETs, IEDM Tech. Dig., 547
- Timp, 1999, The ballistic nanotransistor, IEDM Tech. Dig., 55
- Rhew, 2001, Numerical Study of a Ballistic MOSFET
- Bude, 1999, private communication
- Rhew, 2001, private communication
Cited by
Sorted by citations
Energy dissipation and transport in nanoscale devices
Pop, E. (2010) · Nano Research · doi:10.1007/s12274-010-1019-z · Cited by 1,308
Theory of ballistic nanotransistors
Rahman, A., Guo, J., Datta, S., & Lundstrom, M. (2003) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2003.815366 · Cited by 769
Self-citationHeat Generation and Transport in Nanometer-Scale Transistors
Pop, E., Sinha, S., & Goodson, K. E. (2006) · Proceedings of the IEEE · doi:10.1109/jproc.2006.879794 · Cited by 712
Nanowire Electronics: From Nanoscale to Macroscale
Jia, C., Lin, Z., Huang, Y., & Duan, X. (2019) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00164 · Cited by 376
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
Takagi, S., Iisawa, T., Tezuka, T., Numata, T., Nakaharai, S., Hirashita, N., Moriyama, Y., Usuda, K., Toyoda, E., Dissanayake, S., et al. (2008) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.911034 · Cited by 343
Metadata
- Authors
- Lundstrom, M., & Ren, Z.
- Affiliations
- Purdue University West Lafayette (US)
- ORCID
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2002
- Volume
- 49
- Issue
- 1
- Pages
- 133-141
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2109617856
- Cited by
- 554
- References
- 29
- Citations by year
- 2026: 8 · 2025: 5 · 2024: 8 · 2023: 8 · 2022: 12 · 2021: 17 · 2020: 16 · 2019: 12 · 2018: 18 · 2017: 22 · 2016: 18 · 2015: 29 · 2014: 19 · 2013: 29 · 2012: 24
- FWCI
- 36.75
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Electron Devices (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Keywords
- nanoscale MOSFETs, carrier transport, charge control, velocity saturation, thermal injection, scattering model, device physics
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