Effect of gain and index nonlinearities on single-mode dynamics in semiconductor lasers
Abstract
The finite intraband relaxation time in semiconductor lasers leads to gain saturation at high laser powers. The nonperturbative solution of the single-mode density-matrix equations shows that both the optical gain and the refractive index become intensity dependent as a result of intraband relaxation dynamics. Gain and index nonlinearities are included in the rate equations, and how the modulation response and noise characteristics of semiconductor lasers are affected by such nonlinearities is studied. The intensity dependence of the frequency and the damping rate of relaxation oscillations leads to a fundamental limit imposed on the small-signal modulation bandwidth; the analysis provides an expression for the ultimate modulation bandwidth in terms of the material parameters.>
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During gain-switching, the field within the cavity alternately experiences two working regimes: far above threshold and far below threshold; during the former, stimulated emission dominates and coherent optical pulses are emitted; during the latter, the intracavity field is strongly attenuated and significant phase diffusion occurs.
“The experiment is performed under gain-switching conditions, and the field within the cavity alternately experiences two working regimes: far above threshold and far below threshold. During the former, stimulated emission dominates and coherent optical pulses are emitted. During the latter, the intracavity field is strongly attenuated and significant phase diffusion occurs.”
From Ultra-fast quantum randomness generation by accelerated phase diffusion in a pulsed laser diode (2014) · cites this paper as [20]
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- Authors
- Agrawal, G. P.
- Affiliations
- University of Rochester (US)
- Corresponding author
- Agrawal, G.P.
- ORCID
- Agrawal, G.P.
- Venue
- IEEE Journal of Quantum Electronics
- Published
- 1990
- Volume
- 26
- Issue
- 11
- Pages
- 1901-1909
- ISSN
- 0018-9197 (ISSN-L)
- OpenAlex
- W1973968106
- Cited by
- 105
- References
- 26
- Citations by year
- 2025: 1 · 2024: 1 · 2023: 4 · 2021: 4 · 2020: 2 · 2019: 2 · 2017: 4 · 2016: 2 · 2015: 2 · 2014: 5 · 2013: 2 · 2012: 3
- FWCI
- 11.96
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Journal of Quantum Electronics (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Keywords
- semiconductor lasers, gain saturation, nonlinear refractive index, intraband relaxation, density matrix equations, relaxation oscillations, modulation bandwidth, laser noise, small-signal modulation response
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