The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
Open accessAbstract
A review is presented of the properties of interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InGaAs-InP material system, and the performance achieved by experimental devices is discussed. The experimental work concentrates on the barrier-enhanced lattice-matched InAlAs-InGaAs device grown by low pressure organometallic chemical vapor deposition (OMCVD), which has to date yielded detectors with the highest performance characteristics. Current research on their integration with FETs to form monolithic receivers and with waveguides for on-chip optical signal processing is also included.>
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Cites
The Physics of Semiconductor Devices
Grant, A. J. (1978) · Physics Bulletin · doi:10.1088/0031-9112/29/4/048 · Cited by 791
Ultrawide-band long-wavelength p-i-n photodetectors
Bowers, J. E., & BURRUS, C. A. (1987) · Journal of Lightwave Technology · doi:10.1109/jlt.1987.1075419 · Cited by 359
Surface plasmons confined by microstructures on tunnel junctions
Rendell, R. W., & Scalapino, D. J. (1981) · Physical review. B, Condensed matter · doi:10.1103/physrevb.24.3276 · Cited by 241
Optical response time of In0.53Ga0.47As/InP avalanche photodiodes
Forrest, S. R., Kim, O. K., & Smith, R. (1982) · Applied Physics Letters · doi:10.1063/1.93302 · Cited by 156
GaInAs/GaInAsP multiple-quantum-well integrated heterodyne receiver
Koch, T., Koren, U., Gnall, R. P., et al. (1989) · Electronics Letters · doi:10.1049/el:19891086 · Cited by 93
High-speed zero-bias waveguide photodetectors
Bowers, J. E., & BURRUS, C. A. (1986) · Electronics Letters · doi:10.1049/el:19860617 · Cited by 76
Cited by
Heterogeneous Three-Dimensional Electronics by Use of Printed Semiconductor Nanomaterials
Ahn, J.-H., Kim, H.-S., Lee, K. J., Jeon, S., Kang, S. J., Sun, Y., Nuzzo, R. G., & Rogers, J. A. (2006) · Science · doi:10.1126/science.1132394 · Cited by 693
Low bandgap semiconducting polymers for polymeric photovoltaics
Liu, C., Wang, K., Gong, X., & Heeger, A. J. (2016) · Chemical Society Reviews · doi:10.1039/c5cs00650c · Cited by 555
High-speed Si-Ge avalanche photodiodes
Wang, B., & Mu, J. (2022) · PhotoniX · doi:10.1186/s43074-022-00052-6 · Cited by 86
Impact of Ligands on the Performance of PbS Quantum Dot Visible–Near‐Infrared Photodetectors
Bothra, U., Albaladejo‐Siguan, M., Vaynzof, Y., & Kabra, D. (2023) · Advanced Optical Materials · doi:10.1002/adom.202201897 · Cited by 61
Metadata
- Authors
- Soole, J. B. D., & Schumacher, H.
- Venue
- IEEE Journal of Quantum Electronics
- Published
- 1991-03
- Volume
- 27
- Issue
- 3
- Pages
- 737-752
- ISSN
- 0018-9197 (ISSN-L)
- OpenAlex
- W2142545025
- Cited by
- 344
- References
- 6
- FWCI
- 12.45
- Type
- journal article
- Language
- en
- Open access
- green
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- Soole, J. B. D., & Schumacher, H. (1991). InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications. IEEE Journal of Quantum Electronics. https://doi.org/10.1109/3.81384
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