High-speed Si-Ge avalanche photodiodes
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High-speed optical interconnects of data centers and high performance computers (HPC) have become the rapid development direction in the field of optical communication owing to the explosive growth of market demand. Currently, optical interconnect systems are moving towards higher capacity and integration. High-sensitivity receivers with avalanche photodiodes (APDs) are paid more attention due to the capability to enhance gain bandwidth. The impact ionization coefficient ratio is one crucial parameter for avalanche photodiode optimization, which significantly affects the excess noise and the gain bandwidth product (GBP). The development of silicon-germanium (Si-Ge) APDs are promising thanks to the low impact ionization coefficient ratio of silicon, the simple structure, and the CMOS compatible process. Separate absorption charge multiplication (SACM) structures are typically adopted in Si-Ge APDs to achieve high bandwidth and low noise. This paper reviews design and optimization in high-speed Si-Ge APDs, including advanced APD structures, APD modeling and APD receivers.
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Although relatively easier to achieve in Si APDs at 850 nm, simultaneous (at the same bias voltage) optimization of gain-BW-noise has remained challenging for low-voltage Si/Ge APDs or Si resonant APDs in C/L/O bands.
“Although relatively easier to achieve in Si APDs at 850 nm117, simultaneous (at the same bias voltage) optimization of gain-BW-noise has remained challenging for low-voltage Si/Ge APDs118 or Si resonant APDs119,120 in C/L/O bands.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [118]
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Roadmapping the next generation of silicon photonics
Shekhar, S., Bogaerts, W., Chrostowski, L., Bowers, J. E., Hochberg, M., Soref, R., & Shastri, B. J. (2024) · Nature Communications · doi:10.1038/s41467-024-44750-0 · Cited by 878 · see citing works
- Authors
- Wang, B., & Mu, J.
- Affiliations
- Chinese Academy of Sciences (CN)
- Corresponding author
- Wang, Binhao
- ORCID
- Wang, Binhao
- Venue
- PhotoniX
- Published
- 2022-03-25
- Volume
- 3
- Issue
- 1
- ISSN
- 2662-1991 (ISSN-L)
- OpenAlex
- W4229001774
- Cited by
- 86
- References
- 5
- Citations by year
- 2026: 11 · 2025: 26 · 2024: 28 · 2023: 20 · 2022: 1
- FWCI
- 5.14
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Locations
- PhotoniX (publishedVersion, cc-by)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion)
- Funders
- Chinese Academy of Sciences
- Xi'an Institute of Optics and Precision Mechanics
- State Key Laboratory of Transient Optics and Photonics
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Keywords
- high-speed photodetectors, optical interconnects, data centers, gain-bandwidth product, excess noise, high-sensitivity receiver, CMOS-compatible photonics
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