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Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs

Niknejad, A.M., Meyer, R.G.·1998·IEEE Journal of Solid-State Circuits

Abstract

Silicon integrated circuit spiral inductors and transformers are analyzed using electromagnetic analysis. With appropriate approximations, the calculations are reduced to electrostatic and magnetostatic calculations. The important effects of substrate loss are included in the analysis. Classic circuit analysis and network analysis techniques are used to derive two-port parameters from the circuits. From two-port measurements, low-order, frequency-independent lumped circuits are used to model the physical behavior over a broad-frequency range. The analysis is applied to traditional square and polygon inductors and transformer structures as well as to multilayer metal structures and coupled inductors. A custom computer-aided-design tool called ASITIC is described, which is used for the analysis, design, and optimization of these structures. Measurements taken over a frequency range from 100 MHz to 5 GHz show good agreement with theory.

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Metadata

Authors
Niknejad, A. M., & Meyer, R. G.
Venue
IEEE Journal of Solid-State Circuits
Published
1998
Volume
33
Issue
10
Pages
1470-1481
ISSN
0018-9200 (ISSN-L)
OpenAlex
W2128128047
Cited by
723
References
0
FWCI
18.48
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs. https://app.cochat.ai/papers/10.1109/4.720393
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Niknejad, A. M., & Meyer, R. G. (1998). Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs. IEEE Journal of Solid-State Circuits. https://doi.org/10.1109/4.720393

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