The DOI matches its Crossref record.
Reliability issues of flash memory cells
Abstract
Reliability issues for flash electrically erasable programmable read-only memories are reviewed. The reliability of both the source-erase type (ETOX) flash memory and the NAND structure EEPROM are discussed. Disturbs during programming, write/erase endurance, charge loss of both devices are reviewed, and the reliability of the tunnel oxide and the interpoly dielectric are described. It is shown that bipolarity F-N programming/erase, which is used in the NAND EEPROM, improves the charge to breakdown and decreases the stress-induced leakage current.>
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Citations
Cited by
Scaling the gate dielectric: Materials, integration, and reliability
Buchanan, D. A. (1999) · IBM Journal of Research and Development · doi:10.1147/rd.433.0245 · Cited by 367
A single-transistor silicon synapse
Diorio, C., Hasler, P., Minch, A., & Mead, C. A. (1996) · IEEE Transactions on Electron Devices · doi:10.1109/16.543035 · Cited by 360
Metadata
- Authors
- Aritome, S., Shirota, R., Hemink, G., Endoh, T., & Masuoka, F.
- Venue
- Proceedings of the IEEE
- Published
- 1993-05
- Volume
- 81
- Issue
- 5
- Pages
- 776-788
- ISSN
- 0018-9219 (ISSN-L)
- OpenAlex
- W2113390092
- Cited by
- 221
- References
- 0
- FWCI
- 3.46
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Reliability issues of flash memory cells. https://app.cochat.ai/papers/10.1109/5.220908
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- Aritome, S., Shirota, R., Hemink, G., Endoh, T., & Masuoka, F. (1993). Reliability issues of flash memory cells. Proceedings of the IEEE. https://doi.org/10.1109/5.220908
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