The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Scaling the gate dielectric: Materials, integration, and reliability
Abstract
In this paper a review of the more “fundamental” concerns regarding the scaling of the gate dielectric in the ultrathin regime is presented. Material issues are discussed pertaining to the integration of silicon oxynitride and oxide/nitride stacked layers and how such films might reduce or minimize boron penetration problems and address leakage current and reliability concerns. A methodology is presented to calculate device and chip lifetimes for MOS structures on the basis of data extracted from voltage- and temperature-accelerated measurements. Some integration issues regarding higher-k materials are also discussed because of their ability to solve the scaling problem. However, difficulties are involved in integrating them into a CMOS process flow.
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Citations
Cites
Design of ion-implanted MOSFET's with very small physical dimensions
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Fundamentals of Modern VLSI Devices
Taur, Y., & Ning, T. H. (2009) · Cambridge University Press eBooks · doi:10.1017/cbo9781139195065 · Cited by 2,922
Lo, S.-H., Buchanan, D. A., Taur, Y., & Wang, W. (1997) · IEEE Electron Device Letters · doi:10.1109/55.568766 · Cited by 814
Self-citationExperimental High-Resolution Electron Microscopy
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Trap creation in silicon dioxide produced by hot electrons
DiMaria, D. J., & Stasiak, J. W. (1989) · Journal of Applied Physics · doi:10.1063/1.342824 · Cited by 618
Chemical and electronic structure of the SiO2/Si interface
Grunthaner, F. J., & Grunthaner, P. J. (1986) · Materials Science Reports · doi:10.1016/s0920-2307(86)80001-9 · Cited by 452
Making silicon nitride film a viable gate dielectric
Ma, T. P. (1998) · IEEE Transactions on Electron Devices · doi:10.1109/16.661229 · Cited by 383
Grunthaner, F. J., Grunthaner, P. J., Vasquez, R. P., Lewis, B. F., Maserjian, J., & Madhukar, A. (1979) · Physical Review Letters · doi:10.1103/physrevlett.43.1683 · Cited by 365
Reliability projection for ultra-thin oxides at low voltage
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Reliability issues of flash memory cells
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Cited by
Review on high-k dielectrics reliability issues
Ribes, G., Mitard, J., Denais, M., Bruyere, S., Monsieur, F., Parthasarathy, C., Vincent, E., & Ghibaudo, G. (2005) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2005.845236 · Cited by 533
Chakraborty, A., & Sarkar, A. (2017) · Journal of Computational Electronics · doi:10.1007/s10825-017-0999-2 · Cited by 94
Metadata
- Authors
- Buchanan, D. A.
- Venue
- IBM Journal of Research and Development
- Publisher
- IBM
- Published
- 1999-05
- Volume
- 43
- Issue
- 3
- Pages
- 245-264
- ISSN
- 0018-8646 (ISSN-L)
- OpenAlex
- W2166354192
- Cited by
- 367
- References
- 29
- FWCI
- 33.82
- Type
- journal article
- Language
- en
- Open access
- closed
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Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
