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Silicon carbide MEMS for harsh environments
Abstract
Silicon carbide (SiC) is a promising material for the development of high-temperature solid-state electronics and transducers, owing to its excellent electrical, mechanical, and chemical properties. This paper is a review of silicon carbide for microelectromechanical systems (SiC MEMS). Current efforts in developing SiC MEMS to extend the silicon-based MEMS technology to applications in harsh environments are discussed. A summary is presented of the material properties that make SiC an attractive material for use in such environments. Challenges faced in the development of processing techniques are also outlined. Last, a review of the current stare of SiC MEMS devices and issues facing future progress are presented.
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Citations
Cited by
Recent Developments in Polymer MEMS
Liu, C. (2007) · Advanced Materials · doi:10.1002/adma.200701709 · Cited by 422
A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices
Chin, H. S., Cheong, K. Y., & Ismail, A. B. (2010) · Metallurgical and Materials Transactions B · doi:10.1007/s11663-010-9365-5 · Cited by 337
A Path Beyond Metal and Silicon:Polymer/Nanomaterial Composites for Stretchable Strain Sensors
Qiu, A., Li, P., Yang, Z., Yao, Y., Lee, I., & Ma, J. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201806306 · Cited by 237
Metadata
- Authors
- Mehregany, M., Zorman, C. A., Rajan, N., & Wu, C. H.
- Venue
- Proceedings of the IEEE
- Published
- 1998
- Volume
- 86
- Issue
- 8
- Pages
- 1594-1609
- ISSN
- 0018-9219 (ISSN-L)
- OpenAlex
- W2172277242
- Cited by
- 463
- References
- 0
- FWCI
- 9.73
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Silicon carbide MEMS for harsh environments. https://app.cochat.ai/papers/10.1109/5.704265
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- Mehregany, M., Zorman, C. A., Rajan, N., & Wu, C. H. (1998). Silicon carbide MEMS for harsh environments. Proceedings of the IEEE. https://doi.org/10.1109/5.704265
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