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Silicon-carbide high-voltage (400 V) Schottky barrier diodes
Abstract
The authors describe the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes. Measurements of the forward I-V characteristics of these diodes demonstrate a low forward voltage drop of approximately 1.1 V at an on-state current density of 100 A/cm/sup 2/ for a temperature range of 25 to 200 degrees C. The reverse I-V characteristics of these devices exhibit a sharp breakdown, with breakdown voltages exceeding 400 V at 25 degrees C. In addition, these diodes are shown to have superior reverse recovery characteristics when compared with high-speed silicon P-i-N rectifiers.>
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Citations
Cited by
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Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Gallium nitride devices for power electronic applications
Baliga, B. J. (2013) · Semiconductor Science and Technology · doi:10.1088/0268-1242/28/7/074011 · Cited by 624
Self-citationSilicon carbide benefits and advantages for power electronics circuits and systems
Elasser, A., & Chow, T. P. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021562 · Cited by 537
Performance limiting micropipe defects in silicon carbide wafers
Neudeck, P. G., & Powell, J. A. (1994) · IEEE Electron Device Letters · doi:10.1109/55.285372 · Cited by 309
Metadata
- Authors
- Bhatnagar, M., McLarty, P. K., & Baliga, B. J.
- Venue
- IEEE Electron Device Letters
- Published
- 1992-10
- Volume
- 13
- Issue
- 10
- Pages
- 501-503
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2138059077
- Cited by
- 182
- References
- 0
- FWCI
- 9.33
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Silicon-carbide high-voltage (400 V) Schottky barrier diodes. https://app.cochat.ai/papers/10.1109/55.192814
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- Bhatnagar, M., McLarty, P. K., & Baliga, B. J. (1992). Silicon-carbide high-voltage (400 V) Schottky barrier diodes. IEEE Electron Device Letters. https://doi.org/10.1109/55.192814
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