The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Performance limiting micropipe defects in silicon carbide wafers
Open accessAbstract
Reports on the characteristics of a major defect in mass-produced silicon carbide wafers which severely limits the performance of silicon carbide power devices. Micropipe defects originating in 4H- and 6H-SiC substrates were found to cause pre-avalanche reverse-bias point failures in most epitaxially-grown pn junction devices of 1 mm/sup 2/ or larger in area. Until such defects are significantly reduced from their present density (on the order of 100's of micropipes/cm/sup 2/), silicon carbide power device ratings will be restricted to around several amps or less.>
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Citations
Cites
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
Bhatnagar, M., & Baliga, B. J. (1993) · IEEE Transactions on Electron Devices · doi:10.1109/16.199372 · Cited by 1,120
Investigation of growth processes of ingots of silicon carbide single crystals
Tairov, Y. M., & Tsvetkov, V. F. (1978) · Journal of Crystal Growth · doi:10.1016/0022-0248(78)90169-0 · Cited by 594
Davis, R. F., Kelner, G., Shur, M., Palmour, J. W., & Edmond, J. A. (1991) · Proceedings of the IEEE · doi:10.1109/5.90132 · Cited by 407
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
Bhatnagar, M., McLarty, P. K., & Baliga, B. J. (1992) · IEEE Electron Device Letters · doi:10.1109/55.192814 · Cited by 182
High-voltage 6H-SiC p-n junction diodes
Matus, L. G., Powell, J. A., & Salupo, C. S. (1991) · Applied Physics Letters · doi:10.1063/1.106195 · Cited by 74
Self-citation
Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Reliability and performance limitations in SiC power devices
Singh, R. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2005.10.013 · Cited by 284
Bulk and epitaxial growth of silicon carbide
Kimoto, T. (2016) · Progress in Crystal Growth and Characterization of Materials · doi:10.1016/j.pcrysgrow.2016.04.018 · Cited by 222
Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions
Li, H., Zhao, S., Wang, X., Ding, L., & Mantooth, H. A. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3278270 · Cited by 135
Metadata
- Authors
- Neudeck, P. G., & Powell, J. A.
- Venue
- IEEE Electron Device Letters
- Published
- 1994-02
- Volume
- 15
- Issue
- 2
- Pages
- 63-65
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2121604213
- Cited by
- 309
- References
- 5
- FWCI
- 16.10
- Type
- journal article
- Language
- en
- Open access
- green
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- Neudeck, P. G., & Powell, J. A. (1994). Performance limiting micropipe defects in silicon carbide wafers. IEEE Electron Device Letters. https://doi.org/10.1109/55.285372
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