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Room temperature operation of a quantum-dot flash memory

Welser, J.J., Tiwari, S., Rishton, S., Lee, K.Y., Lee, Y.·1997·IEEE Electron Device Letters

Abstract

A flash-memory device has been fabricated and demonstrated at room temperature by coupling a self-aligned, sub-50-nm quantum dot to the channel of a transistor on a silicon-on-insulator (SOI) substrate. Large threshold voltage shifts of up to 0.75 V are obtained for small erase/write voltages (13 V) at room temperature. At 90 K, evidence of single electron storage is observed. The small size of this device is attractive for achieving high packing densities, while the relatively large output current (100 nA-μA's), low off-state current (10 pA), and simple fabrication, requiring only minor variations in standard processing, make it suitable for integration with current silicon memory and logic technology.

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Metadata

Authors
Welser, J. J., Tiwari, S., Rishton, S., Lee, K. Y., & Lee, Y.
Venue
IEEE Electron Device Letters
Published
1997-06
Volume
18
Issue
6
Pages
278-280
ISSN
  • 0741-3106 (ISSN-L)
  • 1558-0563
OpenAlex
W2107064081
Cited by
195
References
0
FWCI
21.11
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Room temperature operation of a quantum-dot flash memory. https://app.cochat.ai/papers/10.1109/55.585357
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Welser, J. J., Tiwari, S., Rishton, S., Lee, K. Y., & Lee, Y. (1997). Room temperature operation of a quantum-dot flash memory. IEEE Electron Device Letters. https://doi.org/10.1109/55.585357

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.