The DOI matches its Crossref record; 12 of the 12 references it cites were found in a registry or an index.
Self-heating in high-power AlGaN-GaN HFETs
Abstract
We compare self-heating effects in AlGaN-GaN heterostructure field effect transistors (HFETs) grown on sapphire and SiC substrates. Heat dissipation strongly affects the device characteristics soon after the application of the source-drain voltage (in less than 10/sup -7/ s). Our results show that in HFET's with the total epilayer thickness less than 1.5 μm, the thermal impedance, /spl Theta/ is primarily determined by the substrate material and not by the material of the active layer. For our devices grown on 6H-SiC substrates, we measured /spl Theta/ of approximately 2/spl deg/C/spl middot/mm/W, which was more than an order of magnitude smaller than /spl Theta/=25/spl deg/C mm/W measured for similar AlGaN/GaN HFET's grown on sapphire. Our results demonstrate that AlGaN-GaN HFET's grown on SiC substrates combine advantages of superior electron transport properties in AlGaN/GaN heterostructures with excellent thermal properties of SiC, which should make these devices suitable for high-power electronic applications.
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“In contrast, GaN HEMTs conduct current through a two-dimensional electron gas (2DEG) formed within the AlGaN/GaN heterostructure, focusing conduction losses into an ultrathin channel and thereby intensifying localized heating [1,3,16,17].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [17]
Citations
Cites
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M., Sverdlov, B., & Burns, M. J. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,729
Wu, Y., Keller, B. P., Keller, S., et al. (1996) · Applied Physics Letters · doi:10.1063/1.117607 · Cited by 355
High-temperature performance of AlGaN/GaN HFETs on SiC substrates
Gaska, R., Chen, Q., Yang, J., et al. (1997) · IEEE Electron Device Letters · doi:10.1109/55.624930 · Cited by 221
Self-citationElectron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
Gaska, R., Yang, J., Osinsky, A. V., et al. (1998) · Applied Physics Letters · doi:10.1063/1.120852 · Cited by 217
Self-citationGaAs FET principles and technology
DiLorenzo, J. V., & Khandelwal, D. D. (1982) · Medical Entomology and Zoology · Cited by 216
Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
Khan, M. A., Chen, Q., Yang, J., et al. (1996) · IEEE Electron Device Letters · doi:10.1109/55.506356 · Cited by 179
Self-citationAlGaN/GaN HEMTs grown on SiC substrates
Binari, S. C., Redwing, J. M., Kelner, G., et al. (1997) · Electronics Letters · doi:10.1049/el:19970122 · Cited by 164
High-power GaAs FET amplifiers
Hurst, S. L. (1994) · Microelectronics Journal · doi:10.1016/0026-2692(94)90162-7 · Cited by 95
Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics
Kim, W., Aktaş, Ö., Botchkarev, A. E., Salvador, A., Mohammad, S. N., & Morkoç, H. (1996) · Journal of Applied Physics · doi:10.1063/1.362430 · Cited by 90
High-Power GaAs FET Amplifiers
Walker, J. L. (1993) · Medical Entomology and Zoology · Cited by 88
AlGaN-GaN heterostructure FETs with offset gatedesign
Gaska, R., Chen, Q., Yang, J., et al. (1997) · Electronics Letters · doi:10.1049/el:19970818 · Cited by 47
Self-citationReactive Molecular-Beam Epitaxy for Wurtzite GaN
Mohammad, S. N., Kim, W., Salvador, A., et al. (1997) · MRS Bulletin · doi:10.1557/s0883769400032528 · Cited by 19
Cited by
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Sarua, A., Ji, H., Kuball, M., Uren, M. J., Martin, T., Hilton, K. P., & Balmer, R. S. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.882274 · Cited by 267
Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
“In contrast, GaN HEMTs conduct current through a two-dimensional electron gas (2DEG) formed within the AlGaN/GaN heterostructure, focusing conduction losses into an ultrathin channel and thereby intensifying localized heating [1,3,16,17].”
Metadata
- Authors
- Gaska, R., Osinsky, A., Yang, J. W., & Shur, M. S.
- Affiliations
- Rensselaer Polytechnic Institute (US)
- Venue
- IEEE Electron Device Letters
- Published
- 1998-03
- Volume
- 19
- Issue
- 3
- Pages
- 89-91
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2096074167
- Cited by
- 301
- References
- 12
- Citations by year
- 2026: 13 · 2025: 11 · 2024: 12 · 2023: 10 · 2022: 16 · 2021: 10 · 2020: 13 · 2019: 19 · 2018: 15 · 2017: 8 · 2016: 10 · 2015: 6 · 2014: 12 · 2013: 7 · 2012: 11
- FWCI
- 8.02
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Electron Device Letters (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- self-heating, AlGaN/GaN heterostructures, high-frequency transistors, thermal impedance, SiC substrate, sapphire substrate, heat dissipation, high-power electronics, substrate thermal properties
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