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Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime
Abstract
We present the first dc measurements of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) operating in the liquid-helium temperature (LHeT=4.2 K) regime. The current gain of the self-aligned, UHV/CVD-grown SiGe HBT increases monotonically from 110 at 300 K to 1045 at 5.84 K, although parasitic base current leakage limits the useful operating current to above about 1.0 μA at 5.84 K. An aggressively designed base profile (peak N/sub AB//spl ap/8×10/sup 18/ cm/sup -3/) is used to suppress base freeze-out at LHeT (R/sub bi/=18.3 k/spl Omega///spl square/ at 4.48 K). We have also identified a non-ideal minority carrier transport mechanism in the collector current at temperatures below 77 K (I/sub C/ is not proportional to exp(qV/sub BE//kT)) which is unaccounted for in conventional device theory. Preliminary calculations suggest that this phenomenon is due to trap-assisted carrier tunneling from the emitter to the collector through the base potential barrier.
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Si and Ge devices are not suitable for cryogenic operation due to heavy doping effects and carrier freeze-out.
“The Si and Ge devices are not suitable due to heavy doping effects and carrier freeze-out at cryogenic temperature [10, 11]”
From Development and Characterization of a Cryogenic Tuned Amplifier for Penning Trap Applications (2025) · cites this paper as [10]
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References 9 · Cited by 48
Metadata
- Authors
- Joseph, A. J., Cressler, J. D., & Richey, D. M.
- Affiliations
- Auburn University (US)
- Venue
- IEEE Electron Device Letters
- Published
- 1995-06
- Volume
- 16
- Issue
- 6
- Pages
- 268-270
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2108976516
- Cited by
- 48
- References
- 9
- Citations by year
- 2026: 1 · 2025: 3 · 2024: 2 · 2023: 1 · 2021: 1 · 2020: 1 · 2019: 2 · 2018: 1 · 2017: 3 · 2016: 1 · 2015: 1 · 2014: 4 · 2013: 2 · 2012: 2
- FWCI
- 0.48
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Electron Device Letters (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Keywords
- SiGe HBT, cryogenic electronics, current gain, minority carrier transport, trap-assisted tunneling
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