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Low temperature wafer direct bonding
Abstract
A pronounced increase of interface energy of room temperature bonded hydrophilic Si/Si, Si/SiO/sub 2/, and SiO/sub 2//SiO/sub 2/ wafers after storage in air at room temperature, 150/spl deg/C for 10-400 h has been observed. The increased number of OH groups due to a reaction between water and the strained oxide and/or silicon at the interface at temperatures below 110/spl deg/C and the formation of stronger siloxane bonds above 110/spl deg/C appear to be the main mechanisms responsible for the increase in the interface energy. After prolonged storage, interface bubbles are detectable by an infrared camera at the Si/Si bonding seam. Desorbed hydrocarbons as well as hydrogen generated by a reaction of water with silicon appear to be the major contents in the bubbles. Design guidelines for low temperature wafer direct bonding technology are proposed.>
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Cited by
III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects
Roelkens, G., Liu, L., Liang, D., Jones, R., Fang, A., Koch, B., & Bowers, J. (2010) · Laser & Photonics Reviews · doi:10.1002/lpor.200900033 · Cited by 555
Low-Loss BaTiO3–Si Waveguides for Nonlinear Integrated Photonics
Eltes, F., Caimi, D., Fallegger, F., Sousa, M., O’Connor, E., Rossell, M. D., Offrein, B., Fompeyrine, J., & Abel, S. (2016) · ACS Photonics · doi:10.1021/acsphotonics.6b00350 · Cited by 122
Metadata
- Authors
- Tong, Q.-Y., Cha, G., Gafiteanu, R., & Gosele, U.
- Venue
- Journal of Microelectromechanical Systems
- Published
- 1994-03
- Volume
- 3
- Issue
- 1
- Pages
- 29-35
- ISSN
- 1057-7157 (ISSN-L)
- OpenAlex
- W2141436722
- Cited by
- 197
- References
- 0
- FWCI
- 4.39
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Low temperature wafer direct bonding. https://app.cochat.ai/papers/10.1109/84.285720
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- Tong, Q.-Y., Cha, G., Gafiteanu, R., & Gosele, U. (1994). Low temperature wafer direct bonding. Journal of Microelectromechanical Systems. https://doi.org/10.1109/84.285720
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