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Form and capacitance of parallel-plate capacitors
Abstract
In basic electrostatics, the formula for the capacitance of parallel-plate capacitors is derived, for the case that the spacing between the electrodes is very small compared to the length or width of the plates. However, when the separation is wide, the formula for very small separation does not provide accurate results. In our previously published papers, we used the boundary element method (BEM) to derive formulas for the capacitance of strip and disk capacitors that are applicable even when the separation is large. In this paper, we present results and formulas for the capacitances of square and rectangular capacitors.>
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“So, the suggested model from basic electrostatics assuming uniformity of the generated e-field and charge distribution on the conducting plates is not valid (Nishiyama and Nakamura, 1994; Catalan-Izquierdo et al., 2009).”
From Influence of Back Electrostatic Field on the Collection Efficiency of an Electrostatic Lunar Dust Collector (2014) · cites this paper as Nishiyama and Nakamura, 1994
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Research works printed but not linked: 17
- 10.1109/33.56178 · DOI
- 10.1109/33.232065 · DOI
- 10.1007/978-3-642-48860-3 · DOI
- brebbia, 1978, The Boundary Element Method for Engineers
- atkinson, 1989, An Introduction to Numerical Analysis
- nishiyama, 1992, Capacitance of disk capacitors by the boundary element method, Proc First European Conf on Numerical Methods in Engineering, 397
- nishiyama, 1989, Edge correction of strip cpapcitors by the boundary element method, Proc 11th Conf Boundary Element Methods in Engineering, 173
- landau, 0, Electrodynamics of Continuous Media Institute of Physical Problems
- 10.1109/TIM.1979.4314754 · DOI
- 10.1109/33.16649 · DOI
- wheeler, 1983, Transmission line properties of a strip on a dielectric sheet on a plate, IEEE Trans Electron Devices, ed 30, 183
- 10.1002/j.1538-7305.1969.tb04274.x · DOI
- 10.1109/TIM.1985.4315253 · DOI
- 10.1109/TMTT.1971.1127658 · DOI
- 10.1109/TIM.1984.4315224 · DOI
- hayt, 1989, Engineering Elecrtromagnetic
- kirchhoff, 1877, Zur theorie des kondensators, Monatsb Akad Will Berlin, 144
Cited by
Sorted by citations
Afshar-Mohajer, N., Thakker, Y., Wu, C.-Y., & Sorloaica-Hickman, N. (2014) · Aerosol and Air Quality Research · doi:10.4209/aaqr.2013.12.0353 · Cited by 8
“So, the suggested model from basic electrostatics assuming uniformity of the generated e-field and charge distribution on the conducting plates is not valid (Nishiyama and Nakamura, 1994; Catalan-Izquierdo et al. , 2009).”
Metadata
- Authors
- Nishiyama, H., & Nakamura, M.
- Affiliations
- Fujifilm (Japan) (JP)
- Tamagawa University (JP)
- ORCID
- Nakamura, M.
- Venue
- IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A
- Published
- 1994
- Volume
- 17
- Issue
- 3
- Pages
- 477-484
- ISSN
- 1070-9886 (ISSN-L)
- OpenAlex
- W2143340328
- Cited by
- 144
- References
- 0
- Citations by year
- 2026: 13 · 2025: 9 · 2024: 16 · 2023: 10 · 2022: 10 · 2021: 4 · 2020: 8 · 2019: 12 · 2018: 7 · 2017: 10 · 2016: 8 · 2015: 7 · 2014: 8 · 2013: 4 · 2012: 2
- FWCI
- 0.00
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Components Packaging and Manufacturing Technology Part A (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Electromagnetic Scattering and Analysis
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electrical and Electromagnetic Research
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electromagnetic Simulation and Numerical Methods
- Keywords
- parallel plate capacitor, capacitance, electrode geometry, boundary element method, electrostatics
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- CoChat. (2026). Citation check: Form and capacitance of parallel-plate capacitors. https://app.cochat.ai/papers/10.1109/95.311759
- The paper
- Nishiyama, H., & Nakamura, M. (1994). Form and capacitance of parallel-plate capacitors. IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A. https://doi.org/10.1109/95.311759
